大信号PHEMT开关模型,能准确预测谐波和双音互调失真

C. Wei, A. Klimashov, Y. Zhu, E. Lawrence, G. Tkachenko
{"title":"大信号PHEMT开关模型,能准确预测谐波和双音互调失真","authors":"C. Wei, A. Klimashov, Y. Zhu, E. Lawrence, G. Tkachenko","doi":"10.1109/MWSYM.2005.1516880","DOIUrl":null,"url":null,"abstract":"In this paper, we present a comprehensive large-signal PHEMT switch model and address critical switch modeling issues. Reciprocity, dispersion, leakages, and sub-pinchoff, and charge conservation all play important role in generating a realistic large-signal switch model. Device nonlinearities covering linear, saturation, sub-pinchoff and deep pinchoff regions are taken into account in the model. The model has been verified by comparing simulated dc characteristics, S-parameters and power harmonics performance of switch devices with measured results. The model also successfully predicts harmonics, two-tone IP3 and cross-modulation in various switch circuits.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Large-signal PHEMT switch model, which accurately predicts harmonics and two-tone inter-modulation distortion\",\"authors\":\"C. Wei, A. Klimashov, Y. Zhu, E. Lawrence, G. Tkachenko\",\"doi\":\"10.1109/MWSYM.2005.1516880\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we present a comprehensive large-signal PHEMT switch model and address critical switch modeling issues. Reciprocity, dispersion, leakages, and sub-pinchoff, and charge conservation all play important role in generating a realistic large-signal switch model. Device nonlinearities covering linear, saturation, sub-pinchoff and deep pinchoff regions are taken into account in the model. The model has been verified by comparing simulated dc characteristics, S-parameters and power harmonics performance of switch devices with measured results. The model also successfully predicts harmonics, two-tone IP3 and cross-modulation in various switch circuits.\",\"PeriodicalId\":13133,\"journal\":{\"name\":\"IEEE MTT-S International Microwave Symposium Digest, 2005.\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE MTT-S International Microwave Symposium Digest, 2005.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2005.1516880\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE MTT-S International Microwave Symposium Digest, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2005.1516880","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7

摘要

在本文中,我们提出了一个全面的大信号PHEMT开关模型,并解决了关键的开关建模问题。互易性、色散、漏、亚针尖关和电荷守恒在产生现实的大信号开关模型中都起着重要的作用。在模型中考虑了器件非线性,包括线性、饱和、亚峰截断和深峰截断区域。通过将模拟的开关器件直流特性、s参数和功率谐波性能与实测结果进行比较,验证了该模型的正确性。该模型还成功地预测了各种开关电路中的谐波、双音IP3和交叉调制。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Large-signal PHEMT switch model, which accurately predicts harmonics and two-tone inter-modulation distortion
In this paper, we present a comprehensive large-signal PHEMT switch model and address critical switch modeling issues. Reciprocity, dispersion, leakages, and sub-pinchoff, and charge conservation all play important role in generating a realistic large-signal switch model. Device nonlinearities covering linear, saturation, sub-pinchoff and deep pinchoff regions are taken into account in the model. The model has been verified by comparing simulated dc characteristics, S-parameters and power harmonics performance of switch devices with measured results. The model also successfully predicts harmonics, two-tone IP3 and cross-modulation in various switch circuits.
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