化学溶液沉积Sb2Se3薄膜研究其结构、形态和光学性能

A. Kulkarni, Y. Marathe, P. Patil, Sunil D. Marathe, S. D. Khairnar, H. Pathan, R. Patil
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引用次数: 0

摘要

采用室温化学溶液沉积技术制备了sb2se3薄膜。在s2se - 3薄膜的沉积过程中,s2se - 3晶体的溶液沉积随反应时间的变化对反应速率起着重要的控制作用。采用x射线衍射仪(XRD)、扫描电镜(sem)和紫外可见光谱(UV-visible spectroscopy)对制备的sb2se3薄膜的结构、形貌和光学性能进行了研究。sb2se3薄膜的溶液沉积包括两个步骤:初始成核和晶体形成,然后生长形成最终薄膜。反应时间从30分钟增加到120分钟,制备的sb2se3纳米晶的形貌由致密的球体演变为自组装的花状形貌。此外,在1.60 ~ 1.63 eV的光能带隙变化范围内,表明Sb - 2 - Se - 3晶体在可见光区域的能带隙可调性可以优化晶体尺寸。光致发光研究也证明了这一点,该研究揭示了Sb 2 Se 3的发光强度随晶体尺寸的变化是沉积时间的函数。sb2se3晶体对反应条件的光学和形态学响应表明它是光电应用的合适和潜在的候选者,如光伏电池、电子纳米器件、燃料电池等。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Chemical Solution Deposition of Sb2Se3 Films to Study Their Structural, Morphological and Optical Properties
At room temperature chemical solution deposition technique has been employed for the deposition of Sb 2 Se 3 thin films. Solution based deposition of Sb 2 Se 3 crystals with variation in reaction time found to be playing a significant role in controlling the reaction rate during the deposition of Sb 2 Se 3 films. Temporal evolution of structural, morphological and optical properties of deposited Sb 2 Se 3 films were investigated using X-ray diffraction (XRD), scanning electron microscopy and UV-visible spectroscopy, respectively. Solution deposition of Sb 2 Se 3 films involves two steps: initial nucleation and crystal formation followed by growth to form final films. Increased reaction time from 30 to 120 min, deposited films showed morphological evolution for Sb 2 Se 3 nanocrystals from dense spheres to self-assembled flower-like morphology. In addition, optical energy band gap variation from 1.60 to 1.63 eV, suggest the possibility of crystal size optimization with energy band gap tunability of Sb 2 Se 3 crystals in the visible region. This is also evident from the photoluminescence studies, which reveals the luminescence intensity variation with crystal size of Sb 2 Se 3 as a function of deposition time. Optical and morphological response of Sb 2 Se 3 crystals to the reaction conditions suggests it as a suitable and potential candidate for optoelectronic applications such as photovoltaic cells, electronic nano-devices, fuel cells etc .
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