{"title":"Ni掺杂拓扑绝缘体Bi2Se3纳米颗粒的I-V特性","authors":"K. Mazumder, Alfa Sharma, Y. Kumar, P. Shirage","doi":"10.1063/1.5112986","DOIUrl":null,"url":null,"abstract":"Nanostructures of Bismuth Selenide (Bi2Se3), a 3D topological insulator material and Nickel (Ni) doped Bi2Se3 samples were prepared by a hydrothermal method to explore the I-V characteristics. The structural, morphological and optical properties were characterized by XRD, FESEM and UV-vis spectroscopy respectively. The temperature dependent I-V shows an enhancement in the current carrying properties of Ni doped Bi2Se3 due to surface defects and tailoring of optical properties. This study proposes applicability of Bi2Se3 topological insulators as next generation quantum computing materials.Nanostructures of Bismuth Selenide (Bi2Se3), a 3D topological insulator material and Nickel (Ni) doped Bi2Se3 samples were prepared by a hydrothermal method to explore the I-V characteristics. The structural, morphological and optical properties were characterized by XRD, FESEM and UV-vis spectroscopy respectively. The temperature dependent I-V shows an enhancement in the current carrying properties of Ni doped Bi2Se3 due to surface defects and tailoring of optical properties. This study proposes applicability of Bi2Se3 topological insulators as next generation quantum computing materials.","PeriodicalId":10874,"journal":{"name":"DAE SOLID STATE PHYSICS SYMPOSIUM 2018","volume":"51 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2019-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Temperature dependent I-V characteristics of Ni doped topological insulator Bi2Se3 nanoparticles\",\"authors\":\"K. Mazumder, Alfa Sharma, Y. Kumar, P. Shirage\",\"doi\":\"10.1063/1.5112986\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Nanostructures of Bismuth Selenide (Bi2Se3), a 3D topological insulator material and Nickel (Ni) doped Bi2Se3 samples were prepared by a hydrothermal method to explore the I-V characteristics. The structural, morphological and optical properties were characterized by XRD, FESEM and UV-vis spectroscopy respectively. The temperature dependent I-V shows an enhancement in the current carrying properties of Ni doped Bi2Se3 due to surface defects and tailoring of optical properties. This study proposes applicability of Bi2Se3 topological insulators as next generation quantum computing materials.Nanostructures of Bismuth Selenide (Bi2Se3), a 3D topological insulator material and Nickel (Ni) doped Bi2Se3 samples were prepared by a hydrothermal method to explore the I-V characteristics. The structural, morphological and optical properties were characterized by XRD, FESEM and UV-vis spectroscopy respectively. The temperature dependent I-V shows an enhancement in the current carrying properties of Ni doped Bi2Se3 due to surface defects and tailoring of optical properties. This study proposes applicability of Bi2Se3 topological insulators as next generation quantum computing materials.\",\"PeriodicalId\":10874,\"journal\":{\"name\":\"DAE SOLID STATE PHYSICS SYMPOSIUM 2018\",\"volume\":\"51 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-07-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"DAE SOLID STATE PHYSICS SYMPOSIUM 2018\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1063/1.5112986\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"DAE SOLID STATE PHYSICS SYMPOSIUM 2018","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1063/1.5112986","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Temperature dependent I-V characteristics of Ni doped topological insulator Bi2Se3 nanoparticles
Nanostructures of Bismuth Selenide (Bi2Se3), a 3D topological insulator material and Nickel (Ni) doped Bi2Se3 samples were prepared by a hydrothermal method to explore the I-V characteristics. The structural, morphological and optical properties were characterized by XRD, FESEM and UV-vis spectroscopy respectively. The temperature dependent I-V shows an enhancement in the current carrying properties of Ni doped Bi2Se3 due to surface defects and tailoring of optical properties. This study proposes applicability of Bi2Se3 topological insulators as next generation quantum computing materials.Nanostructures of Bismuth Selenide (Bi2Se3), a 3D topological insulator material and Nickel (Ni) doped Bi2Se3 samples were prepared by a hydrothermal method to explore the I-V characteristics. The structural, morphological and optical properties were characterized by XRD, FESEM and UV-vis spectroscopy respectively. The temperature dependent I-V shows an enhancement in the current carrying properties of Ni doped Bi2Se3 due to surface defects and tailoring of optical properties. This study proposes applicability of Bi2Se3 topological insulators as next generation quantum computing materials.
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