{"title":"掺杂氢的4d-3d金属玻璃的电子特性及局部化效应","authors":"P. Dubček , I. Kokanović, B. Leontić, J. Lukatela","doi":"10.1016/0025-5416(88)90320-5","DOIUrl":null,"url":null,"abstract":"<div><p>Magnetoresistance and magnetic susceptibility data obtained on hydrogen-doped samples of ZrNi and ZrCu systems are reported. A mobile-stage sample container in conjunction with a 6 T superconducting coil was used to measure magnetoresistance at temperatures down to 1.7 K with a relative precision of 10<sup>−6</sup>. The temperature profile of the magnetic susceptibility was also measured down to 2 K by Faraday's method using a Cahn electrobalance combined with a conventional magnet. A precision range of 10<sup>−7</sup> J T<sup>−2</sup> mol<sup>−1</sup> was maintained in this measurement. The samples were produced by the common melt-spinning method and were used in the as-obtained condition. Hydrogen strongly influences the quantum-mechanical interference at defects, considerably enhances the quasi-elastic electron scattering and depresses the relative contribution of the spin-orbit interaction. The Maki-Thompson interaction is likewise depressed with increasing hydrogen concentration. The results can be interpreted on the basis of current theoretical concepts based on weak localization in three-dimensional systems in the presence of strong spin-orbit interaction and superconducting fluctuations. The magnetic susceptibility data are interpreted in terms of the hydrogen influence on the electronic density of states at the Fermi level.</p></div>","PeriodicalId":100890,"journal":{"name":"Materials Science and Engineering","volume":"99 1","pages":"Pages 191-194"},"PeriodicalIF":0.0000,"publicationDate":"1988-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0025-5416(88)90320-5","citationCount":"2","resultStr":"{\"title\":\"Electronic properties and localization effects in some hydrogen-doped 4d-3d metallic glasses\",\"authors\":\"P. Dubček , I. Kokanović, B. Leontić, J. Lukatela\",\"doi\":\"10.1016/0025-5416(88)90320-5\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Magnetoresistance and magnetic susceptibility data obtained on hydrogen-doped samples of ZrNi and ZrCu systems are reported. A mobile-stage sample container in conjunction with a 6 T superconducting coil was used to measure magnetoresistance at temperatures down to 1.7 K with a relative precision of 10<sup>−6</sup>. The temperature profile of the magnetic susceptibility was also measured down to 2 K by Faraday's method using a Cahn electrobalance combined with a conventional magnet. A precision range of 10<sup>−7</sup> J T<sup>−2</sup> mol<sup>−1</sup> was maintained in this measurement. The samples were produced by the common melt-spinning method and were used in the as-obtained condition. Hydrogen strongly influences the quantum-mechanical interference at defects, considerably enhances the quasi-elastic electron scattering and depresses the relative contribution of the spin-orbit interaction. The Maki-Thompson interaction is likewise depressed with increasing hydrogen concentration. The results can be interpreted on the basis of current theoretical concepts based on weak localization in three-dimensional systems in the presence of strong spin-orbit interaction and superconducting fluctuations. The magnetic susceptibility data are interpreted in terms of the hydrogen influence on the electronic density of states at the Fermi level.</p></div>\",\"PeriodicalId\":100890,\"journal\":{\"name\":\"Materials Science and Engineering\",\"volume\":\"99 1\",\"pages\":\"Pages 191-194\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/0025-5416(88)90320-5\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials Science and Engineering\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/0025541688903205\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science and Engineering","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/0025541688903205","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electronic properties and localization effects in some hydrogen-doped 4d-3d metallic glasses
Magnetoresistance and magnetic susceptibility data obtained on hydrogen-doped samples of ZrNi and ZrCu systems are reported. A mobile-stage sample container in conjunction with a 6 T superconducting coil was used to measure magnetoresistance at temperatures down to 1.7 K with a relative precision of 10−6. The temperature profile of the magnetic susceptibility was also measured down to 2 K by Faraday's method using a Cahn electrobalance combined with a conventional magnet. A precision range of 10−7 J T−2 mol−1 was maintained in this measurement. The samples were produced by the common melt-spinning method and were used in the as-obtained condition. Hydrogen strongly influences the quantum-mechanical interference at defects, considerably enhances the quasi-elastic electron scattering and depresses the relative contribution of the spin-orbit interaction. The Maki-Thompson interaction is likewise depressed with increasing hydrogen concentration. The results can be interpreted on the basis of current theoretical concepts based on weak localization in three-dimensional systems in the presence of strong spin-orbit interaction and superconducting fluctuations. The magnetic susceptibility data are interpreted in terms of the hydrogen influence on the electronic density of states at the Fermi level.