3.0 ~ 3.6 ghz频段65nm CMOS VCO闪烁噪声上变频抑制

S. Levantino, Marco Zanuso, C. Samori, A. Lacaita
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引用次数: 43

摘要

闪烁噪声上转换为近1/f3相位噪声仍然是CMOS振荡器设计中的主要问题之一。最近提出的抑制技术建议:(i)采用谐振网络[1],(ii)减小晶体管尺寸[2]或(iii)插入源退化[3]。然而,谐振解决方案不能保证在宽频率范围内抑制,而其他选择会影响振荡器启动裕度并降低“白色”1/f2相位噪声。这项工作提出了一种替代技术,不依赖于谐振元件,不影响启动裕度和1/f2相位噪声。在65nm CMOS压控振荡器设计中描述了该技术的演示。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Suppression of flicker noise upconversion in a 65nm CMOS VCO in the 3.0-to-3.6GHz band
Flicker noise up-conversion into close-in 1/f3 phase noise is still one of the major issues in the design of CMOS oscillators. Suppression techniques have been recently presented suggesting (i) adoption of a resonant network [1], (ii) reduction of transistor size [2] or (iii) insertion of source degeneration [3]. However, resonant solutions do not guarantee suppression over a wide frequency range, while the other options affect the oscillator start-up margin and degrade the “white” 1/f2 phase noise. This work presents an alternative technique that does not rely on resonant elements and does not affect both start-up margin and 1/f2 phase noise. Demonstration of the technique is described in a 65nm CMOS VCO design.
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