{"title":"3.0 ~ 3.6 ghz频段65nm CMOS VCO闪烁噪声上变频抑制","authors":"S. Levantino, Marco Zanuso, C. Samori, A. Lacaita","doi":"10.1109/ISSCC.2010.5434054","DOIUrl":null,"url":null,"abstract":"Flicker noise up-conversion into close-in 1/f3 phase noise is still one of the major issues in the design of CMOS oscillators. Suppression techniques have been recently presented suggesting (i) adoption of a resonant network [1], (ii) reduction of transistor size [2] or (iii) insertion of source degeneration [3]. However, resonant solutions do not guarantee suppression over a wide frequency range, while the other options affect the oscillator start-up margin and degrade the “white” 1/f2 phase noise. This work presents an alternative technique that does not rely on resonant elements and does not affect both start-up margin and 1/f2 phase noise. Demonstration of the technique is described in a 65nm CMOS VCO design.","PeriodicalId":6418,"journal":{"name":"2010 IEEE International Solid-State Circuits Conference - (ISSCC)","volume":"59 1","pages":"50-51"},"PeriodicalIF":0.0000,"publicationDate":"2010-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"43","resultStr":"{\"title\":\"Suppression of flicker noise upconversion in a 65nm CMOS VCO in the 3.0-to-3.6GHz band\",\"authors\":\"S. Levantino, Marco Zanuso, C. Samori, A. Lacaita\",\"doi\":\"10.1109/ISSCC.2010.5434054\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Flicker noise up-conversion into close-in 1/f3 phase noise is still one of the major issues in the design of CMOS oscillators. Suppression techniques have been recently presented suggesting (i) adoption of a resonant network [1], (ii) reduction of transistor size [2] or (iii) insertion of source degeneration [3]. However, resonant solutions do not guarantee suppression over a wide frequency range, while the other options affect the oscillator start-up margin and degrade the “white” 1/f2 phase noise. This work presents an alternative technique that does not rely on resonant elements and does not affect both start-up margin and 1/f2 phase noise. Demonstration of the technique is described in a 65nm CMOS VCO design.\",\"PeriodicalId\":6418,\"journal\":{\"name\":\"2010 IEEE International Solid-State Circuits Conference - (ISSCC)\",\"volume\":\"59 1\",\"pages\":\"50-51\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-03-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"43\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE International Solid-State Circuits Conference - (ISSCC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC.2010.5434054\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE International Solid-State Circuits Conference - (ISSCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.2010.5434054","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Suppression of flicker noise upconversion in a 65nm CMOS VCO in the 3.0-to-3.6GHz band
Flicker noise up-conversion into close-in 1/f3 phase noise is still one of the major issues in the design of CMOS oscillators. Suppression techniques have been recently presented suggesting (i) adoption of a resonant network [1], (ii) reduction of transistor size [2] or (iii) insertion of source degeneration [3]. However, resonant solutions do not guarantee suppression over a wide frequency range, while the other options affect the oscillator start-up margin and degrade the “white” 1/f2 phase noise. This work presents an alternative technique that does not rely on resonant elements and does not affect both start-up margin and 1/f2 phase noise. Demonstration of the technique is described in a 65nm CMOS VCO design.