具有精确倾斜控制的电磁驱动光开关的设计与制造

V. Tseng, Jiping Li, Xiaoyang Zhang, Huikai Xie
{"title":"具有精确倾斜控制的电磁驱动光开关的设计与制造","authors":"V. Tseng, Jiping Li, Xiaoyang Zhang, Huikai Xie","doi":"10.1109/OMN.2013.6659062","DOIUrl":null,"url":null,"abstract":"An electromagnetically actuated MEMS mirror with precise tilt angle control for a bi-state optical switch is reported. A tilt angle control of ± 2.29° is achieved by utilizing the 4 μm BOX layer thickness of an SOI wafer together with carefully controlled backside deep silicon etching to construct precise mechanical stoppers. The device is die level packaged with a KOH etched textured silicon encapsulation to prevent scattering reflection from the back cavity to promote high contrast. Measurement results of tilt angle versus applied magnetic field correspond well with theoretical model prediction. The designed device is suitable for optical telecommunication in harsh environments that do not permit any electrical sparks.","PeriodicalId":6334,"journal":{"name":"2013 International Conference on Optical MEMS and Nanophotonics (OMN)","volume":"122 1","pages":"67-68"},"PeriodicalIF":0.0000,"publicationDate":"2013-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Design and fabrication of an electromagnetically actuated optical switch with precise tilt angle control\",\"authors\":\"V. Tseng, Jiping Li, Xiaoyang Zhang, Huikai Xie\",\"doi\":\"10.1109/OMN.2013.6659062\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An electromagnetically actuated MEMS mirror with precise tilt angle control for a bi-state optical switch is reported. A tilt angle control of ± 2.29° is achieved by utilizing the 4 μm BOX layer thickness of an SOI wafer together with carefully controlled backside deep silicon etching to construct precise mechanical stoppers. The device is die level packaged with a KOH etched textured silicon encapsulation to prevent scattering reflection from the back cavity to promote high contrast. Measurement results of tilt angle versus applied magnetic field correspond well with theoretical model prediction. The designed device is suitable for optical telecommunication in harsh environments that do not permit any electrical sparks.\",\"PeriodicalId\":6334,\"journal\":{\"name\":\"2013 International Conference on Optical MEMS and Nanophotonics (OMN)\",\"volume\":\"122 1\",\"pages\":\"67-68\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-11-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 International Conference on Optical MEMS and Nanophotonics (OMN)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/OMN.2013.6659062\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 International Conference on Optical MEMS and Nanophotonics (OMN)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/OMN.2013.6659062","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

报道了一种用于双态光开关的具有精确倾斜角度控制的电磁驱动MEMS反射镜。利用SOI晶圆的4 μm BOX层厚度以及精心控制的背面深硅蚀刻,可以实现±2.29°的倾斜角控制,以构建精确的机械塞。该器件采用KOH蚀刻纹理硅封装,以防止后腔的散射反射,从而提高高对比度。倾角随外加磁场变化的测量结果与理论模型预测吻合较好。本设计的器件适用于不允许电火花的恶劣环境下的光通信。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design and fabrication of an electromagnetically actuated optical switch with precise tilt angle control
An electromagnetically actuated MEMS mirror with precise tilt angle control for a bi-state optical switch is reported. A tilt angle control of ± 2.29° is achieved by utilizing the 4 μm BOX layer thickness of an SOI wafer together with carefully controlled backside deep silicon etching to construct precise mechanical stoppers. The device is die level packaged with a KOH etched textured silicon encapsulation to prevent scattering reflection from the back cavity to promote high contrast. Measurement results of tilt angle versus applied magnetic field correspond well with theoretical model prediction. The designed device is suitable for optical telecommunication in harsh environments that do not permit any electrical sparks.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信