PE MOCVD of thin high transparent dielectric amorphous films of aluminium oxide

Thin transparent amorphous films of aluminum oxide have been obtained using PE MOCVD technique and aluminum β-diketonate as precursor in controlled mixture of gas reagents Ar and O 2 . The films were deposited on glass, quartz and stainless steel substrates at temperature range of 100-250°C. The correlation between electric properties and such deposition parameters as r.f. power Wp, the total gas pressure in chamber P o , O 2 partial pressure, the substrate temperature T, and gas carrier flow rate were determined. Optimal deposition conditions of Al 2 O 3 layers with high dielectric characteristics were established. Auger analysis showed that the composition of films obtained was stoichiometric. Auger depth profiles showed the existence of the transition area enriched with oxygen in the film/substrate heterostructure.