不同Ar/O2比对ZrO2栅极介质薄膜基tft电学性能的影响

2011 IEEE International Conference of Electron Devices and Solid-State Circuits Pub Date : 2011-12-29 DOI:10.1109/EDSSC.2011.6117708

W. Tang, M. Greiner, M. Helander, Z. Lu, W. Ng

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引用次数: 0

摘要

采用射频磁控溅射制备了不同Ar/O2比的高k介电介质ZrO2作为栅极介质的杯基tft。研究了溅射环境中氧浓度对器件电性能的影响。本研究发现，将溅射环境中的氧气浓度提高到Ar/O2比为4:1时，可以改善OTFT的性能，包括迁移率、亚阈值斜率和开/关比。另一方面，进一步将Ar/O2比例增加到4:3会降低设备性能。这表明，器件的电学特性在很大程度上取决于溅射环境中的氧浓度。讨论了这一现象的起源。

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Effects of different Ar/O2 ratios on the electrical properties of CuPc-based TFTs with ZrO2 gate dielectric

CuPc-based TFTs with high-k dielectric ZrO2 as gate dielectric prepared by RF magnetron sputtering with various Ar/O2 ratios have been fabricated. The effects of oxygen concentration in the sputtering ambient on the electrical performance of the devices are investigated. This work finds that increasing oxygen concentration in the sputtering ambient up to a Ar/O2 ratio of 4:1 can improve the OTFT performance including the mobility, sub-threshold slope and on/off ratio. On the other hand, further increasing the Ar/O2 ratio to 4:3 is found to degrade the device performance. This demonstrates that the electrical characteristics of the devices depend strongly on the oxygen concentration in the sputtering ambient. The origin of this phenomenon is discussed.

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2011 IEEE International Conference of Electron Devices and Solid-State Circuits

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