氯处理Cu(In x Ga (1-x)) Se 2薄膜太阳能电池沉积后的再结晶

2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC) Pub Date : 2018-06-10 DOI:10.1109/PVSC.2018.8547595

Elizabeth Palmiotti, Sina Soltanmohammad, A. Rockett, G. Rajan, S. Karki, Benjamin Belfore, S. Marsillac

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引用次数: 6

摘要

研究了350℃共蒸发沉积CuIn(1-x) Se2 (CIGS)再结晶的促进条件。富cu和贫cu的CIGS样品在400°C和550°C下，在卤化物、In3Cl、Cu2Cl、sec4和Se蒸气存在下退火1小时。在550°C时，加入含Se的In3Cl、含Se和不含Se的Cu2Cl和secr4，晶粒尺寸增加了10倍以上。在400℃时，晶粒尺寸增加幅度较小。In3Cl提高了In含量，Cu2{Cl提高了Cu含量，影响了膜的组成。XRD分析表明，In3Cl+Se处理能较好地保留CIGS结构，同时使晶粒大量长大。

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Post-Deposition Recrystallization of Chloride Treated Cu(In x Ga (1-x)) Se 2 Thin-Film Solar Cells

Conditions promoting the recrystallization of CuIn(1-x) Se2 (CIGS) deposited by co-evaporation at 350°C were studied. Cu-rich and Cu-poor CIGS samples were annealed at 400°C and 550°C for 1 hour in the presence of alkali halide, In3Cl,Cu2Cl, SeCl4, and Se vapors. Increases in grain size of greater than 10x were observed with In3Cl with Se, Cu2Cl with and without Se, and SeCl4 at 550°C. Smaller magnitude grain size increases resulted at 400°C. Film composition was influenced by the vapors present with In3Cl enhancing the In content and Cu2{Cl enhancing the Cu content. Based on XRD analysis, the In3Cl+Se treatment best preserves the CIGS structure while resulting in a large amount of grain growth.

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2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)

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