{"title":"基于14nm CMOS技术的时延跟踪流水线sar TDC,采用延时跟踪500fs时间步长,实现10GS/s 8b 25fJ/c-s 2850um2两步时域ADC","authors":"Juzheng Liu, Mohsen Hassanpourghadi, M. Chen","doi":"10.1109/ISSCC42614.2022.9731625","DOIUrl":null,"url":null,"abstract":"High-speed (>GS/s) medium-resolution ADCs are in high demand for wideband communication ICs. Meanwhile, the increasing cost in advanced technology nodes favors area-efficient ADC architectures. The traditional voltage-domain time-interleaved (TI) SAR ADC [1]–[2] is a popular choice for its superior power efficiency. However, its single-channel sample rate is generally limited to <1GS/s, necessitating a large number of TI channels in high-sample-rate scenarios. It inevitably increases implementation overhead, including capacitive loading to the input driver and total area consumption. Recently, time-domain ADCs [3]–[5] have shown promising sampling speed, but are mostly based on thermometer coded time-to-digital converters (TDC). Unfortunately, the circuit complexity for such Flash TDC grows exponentially with the target bit resolution. Existing SAR TDCs [6] demonstrate a lower complexity but are generally limited in sample rate (MS/s). In this work, we propose a two-step time-domain ADC that uses a first-stage Flash TDC with the residue time quantized by the second-stage SAR TDC, targeting the >GS/s regime. To further improve the throughput of SAR TDC conversion, we propose a delay-tracking pipelining technique that allows the SAR TDC to quantize two residue time samples, simultaneously. At the circuit level, we use a selective delay tuning (SDT) cell to provide the time reference required for SAR conversion without using an excessive number of delay stages. A proof-of-concept ADC prototype in 14nm CMOS technology with 2x time interleaving achieves 10GS/s with 37.2dB SNDR at Nyquist frequency. It measures an energy efficiency of 24.8fJ/conv-step and occupies an active area of 2850um2, which are the highest reported energy efficiency and smallest area consumption among the state-of-the-art ADCs with> 10GS/s [7].","PeriodicalId":6830,"journal":{"name":"2022 IEEE International Solid- State Circuits Conference (ISSCC)","volume":"73 1","pages":"160-162"},"PeriodicalIF":0.0000,"publicationDate":"2022-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"17","resultStr":"{\"title\":\"A 10GS/s 8b 25fJ/c-s 2850um2 Two-Step Time-Domain ADC Using Delay-Tracking Pipelined-SAR TDC with 500fs Time Step in 14nm CMOS Technology\",\"authors\":\"Juzheng Liu, Mohsen Hassanpourghadi, M. Chen\",\"doi\":\"10.1109/ISSCC42614.2022.9731625\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High-speed (>GS/s) medium-resolution ADCs are in high demand for wideband communication ICs. 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In this work, we propose a two-step time-domain ADC that uses a first-stage Flash TDC with the residue time quantized by the second-stage SAR TDC, targeting the >GS/s regime. To further improve the throughput of SAR TDC conversion, we propose a delay-tracking pipelining technique that allows the SAR TDC to quantize two residue time samples, simultaneously. At the circuit level, we use a selective delay tuning (SDT) cell to provide the time reference required for SAR conversion without using an excessive number of delay stages. A proof-of-concept ADC prototype in 14nm CMOS technology with 2x time interleaving achieves 10GS/s with 37.2dB SNDR at Nyquist frequency. 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引用次数: 17
摘要
高速(>GS/s)中分辨率adc对宽带通信ic的需求很大。同时,先进技术节点的成本不断增加,有利于面积高效的ADC架构。传统的电压域时间交错(TI) SAR ADC[1] -[2]因其卓越的功率效率而成为一种流行的选择。然而,它的单通道采样率通常限制在GS/s范围内。为了进一步提高SAR TDC转换的吞吐量,我们提出了一种延迟跟踪流水线技术,该技术允许SAR TDC同时量化两个剩余时间样本。在电路级,我们使用选择性延迟调谐(SDT)单元来提供SAR转换所需的时间参考,而不使用过多的延迟级。概念验证ADC原型采用14nm CMOS技术,采用2倍时间交错,在Nyquist频率下实现10GS/s和37.2dB SNDR。它的能量效率为24.8fJ/ v-step,占用2850um2的有效面积,这是目前最先进的> 10GS/s的adc中报道的最高的能量效率和最小的面积消耗[7]。
A 10GS/s 8b 25fJ/c-s 2850um2 Two-Step Time-Domain ADC Using Delay-Tracking Pipelined-SAR TDC with 500fs Time Step in 14nm CMOS Technology
High-speed (>GS/s) medium-resolution ADCs are in high demand for wideband communication ICs. Meanwhile, the increasing cost in advanced technology nodes favors area-efficient ADC architectures. The traditional voltage-domain time-interleaved (TI) SAR ADC [1]–[2] is a popular choice for its superior power efficiency. However, its single-channel sample rate is generally limited to <1GS/s, necessitating a large number of TI channels in high-sample-rate scenarios. It inevitably increases implementation overhead, including capacitive loading to the input driver and total area consumption. Recently, time-domain ADCs [3]–[5] have shown promising sampling speed, but are mostly based on thermometer coded time-to-digital converters (TDC). Unfortunately, the circuit complexity for such Flash TDC grows exponentially with the target bit resolution. Existing SAR TDCs [6] demonstrate a lower complexity but are generally limited in sample rate (MS/s). In this work, we propose a two-step time-domain ADC that uses a first-stage Flash TDC with the residue time quantized by the second-stage SAR TDC, targeting the >GS/s regime. To further improve the throughput of SAR TDC conversion, we propose a delay-tracking pipelining technique that allows the SAR TDC to quantize two residue time samples, simultaneously. At the circuit level, we use a selective delay tuning (SDT) cell to provide the time reference required for SAR conversion without using an excessive number of delay stages. A proof-of-concept ADC prototype in 14nm CMOS technology with 2x time interleaving achieves 10GS/s with 37.2dB SNDR at Nyquist frequency. It measures an energy efficiency of 24.8fJ/conv-step and occupies an active area of 2850um2, which are the highest reported energy efficiency and smallest area consumption among the state-of-the-art ADCs with> 10GS/s [7].