Ruchi Singh, Gaurav Siddharth, R. Bhardwaj, S. Mukherjee
{"title":"溅射生长Sb掺杂ZnO薄膜的结构和光学研究","authors":"Ruchi Singh, Gaurav Siddharth, R. Bhardwaj, S. Mukherjee","doi":"10.1109/NANO51122.2021.9514339","DOIUrl":null,"url":null,"abstract":"Sb-ZnO (SZO) thin films were formed on n-Si semiconductor and sapphire by dual ion beam sputtering (DIBS) technique. Structural and optical parameters of SZO sputtered grown film were determined by ellipsometry and field emission scanning electron microscopy (FE-SEM), and I-V analysis of the SZO/n-Si heterojunction device in dark. A smooth film without any grain boundaries is observed in SEM analysis. The bandgap (Eg) of the grown SZO film is obtained and the value of Eg obtained is 3.92 eV. A high refractive index in the range of n=1.85-2.08 is shown by the deposited SZO film in the ultraviolet (UV)-visible region, moreover, it can be seen from the ellipsometry analysis that the fundamental absorption edge is obtained near the UV region. A rectification ratio of ~ 16 times is observed at ±4 V for SZO/n-Si heterojunction. The Study concludes that SZO material has the potential to be used in the application dealing with the UV region of the light spectra.","PeriodicalId":6791,"journal":{"name":"2021 IEEE 21st International Conference on Nanotechnology (NANO)","volume":"25 1","pages":"474-477"},"PeriodicalIF":0.0000,"publicationDate":"2021-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Structural and optical study of sputtered grown Sb doped ZnO thin film\",\"authors\":\"Ruchi Singh, Gaurav Siddharth, R. Bhardwaj, S. Mukherjee\",\"doi\":\"10.1109/NANO51122.2021.9514339\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Sb-ZnO (SZO) thin films were formed on n-Si semiconductor and sapphire by dual ion beam sputtering (DIBS) technique. Structural and optical parameters of SZO sputtered grown film were determined by ellipsometry and field emission scanning electron microscopy (FE-SEM), and I-V analysis of the SZO/n-Si heterojunction device in dark. A smooth film without any grain boundaries is observed in SEM analysis. The bandgap (Eg) of the grown SZO film is obtained and the value of Eg obtained is 3.92 eV. A high refractive index in the range of n=1.85-2.08 is shown by the deposited SZO film in the ultraviolet (UV)-visible region, moreover, it can be seen from the ellipsometry analysis that the fundamental absorption edge is obtained near the UV region. A rectification ratio of ~ 16 times is observed at ±4 V for SZO/n-Si heterojunction. The Study concludes that SZO material has the potential to be used in the application dealing with the UV region of the light spectra.\",\"PeriodicalId\":6791,\"journal\":{\"name\":\"2021 IEEE 21st International Conference on Nanotechnology (NANO)\",\"volume\":\"25 1\",\"pages\":\"474-477\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-07-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE 21st International Conference on Nanotechnology (NANO)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NANO51122.2021.9514339\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE 21st International Conference on Nanotechnology (NANO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NANO51122.2021.9514339","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Structural and optical study of sputtered grown Sb doped ZnO thin film
Sb-ZnO (SZO) thin films were formed on n-Si semiconductor and sapphire by dual ion beam sputtering (DIBS) technique. Structural and optical parameters of SZO sputtered grown film were determined by ellipsometry and field emission scanning electron microscopy (FE-SEM), and I-V analysis of the SZO/n-Si heterojunction device in dark. A smooth film without any grain boundaries is observed in SEM analysis. The bandgap (Eg) of the grown SZO film is obtained and the value of Eg obtained is 3.92 eV. A high refractive index in the range of n=1.85-2.08 is shown by the deposited SZO film in the ultraviolet (UV)-visible region, moreover, it can be seen from the ellipsometry analysis that the fundamental absorption edge is obtained near the UV region. A rectification ratio of ~ 16 times is observed at ±4 V for SZO/n-Si heterojunction. The Study concludes that SZO material has the potential to be used in the application dealing with the UV region of the light spectra.
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