类dram机械非易失性存储器

TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference Pub Date : 2007-06-10 DOI:10.1109/SENSOR.2007.4300601

W. Jang, J. Lee, Jun‐Bo Yoon

{"title":"类dram机械非易失性存储器","authors":"W. Jang, J. Lee, Jun‐Bo Yoon","doi":"10.1109/SENSOR.2007.4300601","DOIUrl":null,"url":null,"abstract":"A DRAM-like mechanical non-volatile memory (NVM) is newly proposed and fabricated using CMOS-compatible poly-Si surface micromachining. The key concept is developed that the proposed memory is non-volatile because the MEMS switch can clearly eliminate the leakage current when the device is off. The mechanical NVM shows excellent on-off characteristics (sub-threshold swing~4 mV/decade), high switching speed (~300 kHz) and non-volatility. This paper demonstrates the feasibility of the mechanical NVM as a new memory for ULSI applications.","PeriodicalId":23295,"journal":{"name":"TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference","volume":"25 1","pages":"2187-2190"},"PeriodicalIF":0.0000,"publicationDate":"2007-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"A Dram-Like Mechanical Non-Volatile Memory\",\"authors\":\"W. Jang, J. Lee, Jun‐Bo Yoon\",\"doi\":\"10.1109/SENSOR.2007.4300601\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A DRAM-like mechanical non-volatile memory (NVM) is newly proposed and fabricated using CMOS-compatible poly-Si surface micromachining. The key concept is developed that the proposed memory is non-volatile because the MEMS switch can clearly eliminate the leakage current when the device is off. The mechanical NVM shows excellent on-off characteristics (sub-threshold swing~4 mV/decade), high switching speed (~300 kHz) and non-volatility. This paper demonstrates the feasibility of the mechanical NVM as a new memory for ULSI applications.\",\"PeriodicalId\":23295,\"journal\":{\"name\":\"TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference\",\"volume\":\"25 1\",\"pages\":\"2187-2190\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-06-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SENSOR.2007.4300601\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SENSOR.2007.4300601","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 11

摘要

采用与cmos兼容的多晶硅表面微加工技术，提出并制备了一种类dram的机械非易失性存储器(NVM)。关键的概念是，所提出的存储器是非易失性的，因为MEMS开关可以在器件关闭时清楚地消除泄漏电流。机械NVM具有优良的通断特性(亚阈值摆幅~4 mV/ 10年)、高开关速度(~300 kHz)和无挥发性。本文论证了机械NVM作为ULSI应用的一种新型存储器的可行性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A Dram-Like Mechanical Non-Volatile Memory

A DRAM-like mechanical non-volatile memory (NVM) is newly proposed and fabricated using CMOS-compatible poly-Si surface micromachining. The key concept is developed that the proposed memory is non-volatile because the MEMS switch can clearly eliminate the leakage current when the device is off. The mechanical NVM shows excellent on-off characteristics (sub-threshold swing~4 mV/decade), high switching speed (~300 kHz) and non-volatility. This paper demonstrates the feasibility of the mechanical NVM as a new memory for ULSI applications.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference

自引率

0.00%

发文量