基于多跳电感耦合接口的高带宽3d堆叠存储器串扰分析及对策

K. Shiba, Atsutake Kosuge, M. Hamada, T. Kuroda
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引用次数: 0

摘要

本文利用多跳电感耦合接口对高带宽3d堆叠存储器中的串扰进行了深入分析,并提出了两种应对措施。本文利用三维电磁模拟器分析了七个堆叠芯片之间的串扰。详细分析了两种主要的串扰源:同心线圈和相邻线圈。为了抑制这些串扰,本文提出了两种相应的对策:短路线圈和8形线圈。在模拟中,这些线圈的组合将面积效率提高了4倍。提出的方法为高带宽堆叠存储器提供了面积高效的电感耦合接口。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Crosstalk Analysis and Countermeasures of High-Bandwidth 3D-Stacked Memory Using Multi-Hop Inductive Coupling Interface
SUMMARY This paper describes an in-depth analysis of crosstalk in a high-bandwidth 3D-stacked memory using a multi-hop inductive coupling interface and proposes two countermeasures. This work analyzes the crosstalk among seven stacked chips using a 3D electromagnetic (EM) simulator. The detailed analysis reveals two main crosstalk sources: concentric coils and adjacent coils. To suppress these crosstalks, this paper proposes two corresponding countermeasures: shorted coils and 8-shaped coils. The combination of these coils improves area efficiency by a factor of 4 in simulation. The proposed methods enable an area-efficient inductive coupling interface for high-bandwidth stacked memory.
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