存储高密度带电粒子的高纵横比微管阵列的微型化

A. Narimannezhad, J. Jennings, M. Weber, K. Lynn
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引用次数: 2

摘要

本文提出了一种便携式高密度带电粒子阱的制造方法,该阱具有比传统的Penning-Malmberg阱低得多的端势垒势的微阱阵列[1]。微阱是为储存反物质如正电子而设计的。大长度与半径宽高比(1000:1)微阱阵列的制造涉及先进的技术,包括光刻、硅晶圆的深度反应离子蚀刻(DRIE)以实现通孔、晶圆表面和通孔内部的金溅射以及热压缩键合。结合的堆栈是镀金电镀,以实现一个均匀的金表面,以尽量减少贴片效应。正电子损失发生在实验中的陷阱缺陷,如微陷阱的不对准,不对称和表面的物理缺陷。本文描述了所遇到的制造问题,并解决了几何误差和不对称。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Microfabrication of high aspect ratio microtube arrays to store high density charged particles
Fabrication of a portable high-density charged particle trap with an array of micro-Penning-Malmberg traps (microtraps) with substantially lower end barrier potentials than conventional Penning-Malmberg traps is presented [1]. The microtraps are designed for antimatter storage such as positrons. The fabrication of large length to radius aspect ratio (1000:1) microtrap arrays involved advanced techniques including photolithography, deep reactive ion etching (DRIE) of silicon wafers to achieve through-vias, gold sputtering of the wafers surfaces and inside the vias, and thermal compression bonding. The bonded stacks were gold electroplated to achieve a uniform gold surface to minimize the patch effects. Positron losses occur in experimentation by trap imperfections such as misalignment of microtraps, asymmetries, and physical imperfections on the surfaces. This paper describes the fabrication issues encountered and addresses geometry errors and asymmetries.
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