S. Amakawa, R. Goda, K. Katayama, K. Takano, T. Yoshida, M. Fujishima
{"title":"用于毫米波应用的宽带CMOS去耦电源线","authors":"S. Amakawa, R. Goda, K. Katayama, K. Takano, T. Yoshida, M. Fujishima","doi":"10.1109/MWSYM.2015.7167043","DOIUrl":null,"url":null,"abstract":"A CMOS decoupling power line intended for use in millimeter-wave circuits is fabricated and characterized up to 325 GHz. It is designed to have a low dc resistance and an extremely low high-frequency characteristic impedance. The input impedance of a 0.3-mm-long line is shown to stay roughly below 1 Ω in 20 GHz-170GHz and below 2 Ω in 220 GHz-325 GHz, irrespective of whether the far end of the line is open- or short-ended, which clearly demonstrates its extremely wideband decoupling capability.","PeriodicalId":6493,"journal":{"name":"2015 IEEE MTT-S International Microwave Symposium","volume":"1 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":"{\"title\":\"Wideband CMOS decoupling power line for millimeter-wave applications\",\"authors\":\"S. Amakawa, R. Goda, K. Katayama, K. Takano, T. Yoshida, M. Fujishima\",\"doi\":\"10.1109/MWSYM.2015.7167043\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A CMOS decoupling power line intended for use in millimeter-wave circuits is fabricated and characterized up to 325 GHz. It is designed to have a low dc resistance and an extremely low high-frequency characteristic impedance. The input impedance of a 0.3-mm-long line is shown to stay roughly below 1 Ω in 20 GHz-170GHz and below 2 Ω in 220 GHz-325 GHz, irrespective of whether the far end of the line is open- or short-ended, which clearly demonstrates its extremely wideband decoupling capability.\",\"PeriodicalId\":6493,\"journal\":{\"name\":\"2015 IEEE MTT-S International Microwave Symposium\",\"volume\":\"1 1\",\"pages\":\"1-4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-05-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"16\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE MTT-S International Microwave Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2015.7167043\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE MTT-S International Microwave Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2015.7167043","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Wideband CMOS decoupling power line for millimeter-wave applications
A CMOS decoupling power line intended for use in millimeter-wave circuits is fabricated and characterized up to 325 GHz. It is designed to have a low dc resistance and an extremely low high-frequency characteristic impedance. The input impedance of a 0.3-mm-long line is shown to stay roughly below 1 Ω in 20 GHz-170GHz and below 2 Ω in 220 GHz-325 GHz, irrespective of whether the far end of the line is open- or short-ended, which clearly demonstrates its extremely wideband decoupling capability.