12b 22.5/45MS/s 3.0mW 0.059mm2 CMOS SAR ADC, SFDR超过90dB

Wenbo Liu, P. Huang, Y. Chiu
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引用次数: 142

摘要

CMOS技术的缩放已经打开了在纳米范围内实现高性能模数转换的途径,其中开关比放大更受欢迎。逐次逼近寄存器(SAR)是一种依赖于工艺技术的高转换速度的转换架构,因此以其优越的能效、小芯片面积和良好的数字兼容性而闻名。如果实现得当,SAR ADC还受益于潜在的轨对轨输入摆幅、输入采样期间100%的电容利用率(因此低kT/C噪声)以及转换过程中对比较器偏移的不敏感性。SAR ADC的线性限制因素包括电容失配、采样开关非理想性,以及由于DAC的高内部开关速度而导致的参考电压沉降问题。在这项工作中,提出了一个次基数2 SAR ADC,它采用基于微扰的数字背景校准方案和动态阈值比较(DTC)技术来克服这些性能限制因素。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 12b 22.5/45MS/s 3.0mW 0.059mm2 CMOS SAR ADC achieving over 90dB SFDR
CMOS technology scaling has opened a pathway to high-performance analog-to-digital conversion in the nanometer regime, where switching is preferred over amplifying. Successive-approximation-register (SAR) is one of the conversion architectures that rely on the high switching speed of process technology, and is thus distinctively known for its superior energy efficiency, small chip area, and good digital compatibility. When properly implemented, a SAR ADC also benefits from a potential rail-to-rail input swing, 100% capacitance utilization during input sampling (thus low kT/C noise), and insensitivity to comparator offsets during the conversion process. The linearity-limiting factors for SAR ADC are capacitor mismatch, sampling switch non-idealities, as well as the reference voltage settling issue due to the high internal switching speed of the DAC. In this work, a sub-radix-2 SAR ADC is presented, which employs a perturbation-based digital background calibration scheme and a dynamic-threshold-comparison (DTC) technique to overcome some of these performance-limiting factors.
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