{"title":"基于碲化镉的光电转换器sno2 / pcdte、ito / pcdte串联电阻И in2o3 / pcdte","authors":"S. Utamuradova, S. Muzafarova","doi":"10.31618/esu.2413-9335.2021.1.93.1550","DOIUrl":null,"url":null,"abstract":"The operational parameters and efficiency of the SnO2 / pCdTe, ITO / pCdTe and In2O3 / pCdTe photoconverters have been investigated. The real values of the series resistance of the structures under study have been determined. In film photoconverters, a significant contribution to the series resistance is made by the resistance of the transition dielectric layer of tellurium oxide TeO2 between the semiconductor and the resistance between the rear ohmic contact of the structures.","PeriodicalId":11879,"journal":{"name":"EurasianUnionScientists","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2022-01-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"SERIAL RESISTANCE OF PHOTOCONVERTERS SNO2/PCDTE, ITO/PCDTE И IN2O3/PCDTE BASED ON CADMIUM TELLURIDE\",\"authors\":\"S. Utamuradova, S. Muzafarova\",\"doi\":\"10.31618/esu.2413-9335.2021.1.93.1550\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The operational parameters and efficiency of the SnO2 / pCdTe, ITO / pCdTe and In2O3 / pCdTe photoconverters have been investigated. The real values of the series resistance of the structures under study have been determined. In film photoconverters, a significant contribution to the series resistance is made by the resistance of the transition dielectric layer of tellurium oxide TeO2 between the semiconductor and the resistance between the rear ohmic contact of the structures.\",\"PeriodicalId\":11879,\"journal\":{\"name\":\"EurasianUnionScientists\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-01-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"EurasianUnionScientists\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.31618/esu.2413-9335.2021.1.93.1550\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"EurasianUnionScientists","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.31618/esu.2413-9335.2021.1.93.1550","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
SERIAL RESISTANCE OF PHOTOCONVERTERS SNO2/PCDTE, ITO/PCDTE И IN2O3/PCDTE BASED ON CADMIUM TELLURIDE
The operational parameters and efficiency of the SnO2 / pCdTe, ITO / pCdTe and In2O3 / pCdTe photoconverters have been investigated. The real values of the series resistance of the structures under study have been determined. In film photoconverters, a significant contribution to the series resistance is made by the resistance of the transition dielectric layer of tellurium oxide TeO2 between the semiconductor and the resistance between the rear ohmic contact of the structures.
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