一种0.02mm2嵌入式温度传感器，精度为±2°C，用于25nm移动DRAM的自刷新控制

ESSCIRC Conference 2015 - 41st European Solid-State Circuits Conference (ESSCIRC) Pub Date : 2015-11-02 DOI:10.1109/ESSCIRC.2015.7313878

Yeomyung Kim, Woojun Choi, Jaehoon Kim, Sanghoon Lee, Sanghoon Lee, Hyeongon Kim, K. Makinwa, Youngcheol Chae, Tae Wook Kim

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引用次数: 14

摘要

本文介绍了一种直接控制25nm移动DRAM自刷新周期的全cmos嵌入式温度传感器。它占地0.02mm2，在单次温度修剪后，在20°C至95°C范围内实现0.04°C分辨率和±2°C精度。这种性能是通过使用动态阈值mosfet作为温度传感器件，并通过使用斩波和修剪来减轻器件不匹配和工艺扩散的影响来实现的。该传感器在7 khz的转换速率下消耗9w，分辨率为50mK，对应于分辨率FoM为3.2pJK2。当用于控制8GB移动DRAM的自刷新周期时，该传感器在20°C至95°C范围内可将其待机电流降低7倍。

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A 0.02mm2 embedded temperature sensor with ±2°C inaccuracy for self-refresh control in 25nm mobile DRAM

This paper describes an all-CMOS embedded temperature sensor that directly controls the self-refresh period of a 25nm mobile DRAM. It occupies 0.02mm2, and achieves 0.04°C resolution and ±2°C accuracy from 20°C to 95°C after a single temperature trim. This performance is enabled by the use of dynamic threshold MOSFETs as temperature sensing devices, and by using chopping and trimming to mitigate the effects of device mismatch and process spread. The sensor consumes 9uW at a conversion rate of 7-kHz and a resolution of 50mK, which corresponds to a resolution FoM of 3.2pJK2. When used to control the self-refresh period of an 8GB mobile DRAM, the sensor reduces its standby current by 7x over a 20°C to 95°C range.

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ESSCIRC Conference 2015 - 41st European Solid-State Circuits Conference (ESSCIRC)

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