量子晶体管的高级生长/处理

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147447

K. Furuya, Y. Miyamoto

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引用次数: 0

摘要

讨论了利用电子与人工形成的势结构之间的相干相互作用来控制电子输运。阐述了电子波衍射晶体管的工作原理。介绍了用于相干电子器件的GaInAs/InP纳米光栅的制备方法。扩展了电子与势结构之间的相干相互作用的概念，提出了利用电子与按设计放置在半导体晶体中的杂质离子之间的相干相互作用。

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Advanced growth/processing for quantum transistors

The control of electron transport by using the coherent interaction between the electron and artificially formed potential structure is discussed. The principle of the electron wave diffraction transistor is explained. Fabrication of GaInAs/InP nanometer grating for coherent electron devices is described. Extending the concept of the coherent interaction between the electron and the potential structure, the use of the coherent interaction between the electron and impurity ions placed in the semiconductor crystal according to a design is proposed.<>

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[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

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