印刷低温金属氧化物薄膜晶体管

The 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS) Pub Date : 2014-04-13 DOI:10.1109/NEMS.2014.6908841

Zheng Chen, Xinzhou Wu, T. Zhou, Z. Cui

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引用次数: 0

摘要

采用喷墨打印技术制备了氧化铟半导体薄膜晶体管(TFT)，并对其进行了200 ~ 300℃的退火处理。在250°C以上的退火温度下，所制得的氧化铟薄膜具有良好的形貌和良好的性能。此外，在200°C的加工温度下，通过额外的真空退火，获得了超过0.5cm2/Vs的电子迁移率。

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Printed low temperature metal oxide thin film transistors

Thin film transistors (TFT) were constructed by inkjet printing of indium oxide semiconductor, which were annealed at the temperature of 200-300°C. Good morphology of printed indium oxide films was achieved and the printed thin film transistors exhibited acceptable performances above 250°C of annealing temperature. Furthermore, electron mobility in excess of 0.5cm2/Vs was obtained at processed temperature of 200°C through additional vacuum annealing.

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来源期刊

The 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)

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