在0.13 /spl mu/m CMOS技术节点上采用稳健的数字延迟线架构,可降低设计和工艺灵敏度

P. Raha, S. Randall, R. Jennings, B. Helmick, A. Amerasekera, B. Haroun
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引用次数: 36

摘要

针对移动应用的DSP内核的高工作频率和低功耗要求的结合使得这些设备的时钟合成和相位同步非常具有挑战性。这些限制使得全数字解决方案(数字锁相环和dll)成为一个有吸引力的选择(Dunning等人,1995;炸,1996;Minami et al ., 2000)。本文介绍了一种可用于这些应用的0.11 /spl mu/m(硅栅长度)CMOS技术的数字延迟线架构。在这些几何形状上,工艺可变性和灵敏度增加,并且很难在工艺、电压和温度(PVT角)的整个变化范围内满足目标规格。本文提出的设计方法最大限度地减少了这些敏感性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A robust digital delay line architecture in a 0.13 /spl mu/m CMOS technology node for reduced design and process sensitivities
The combination of high operating frequencies and low-power requirements for DSP cores targeted towards mobile applications makes clock synthesis and phase synchronization for these devices very challenging. These constraints make all-digital solutions (digital PLLs and DLLs) an attractive option (Dunning et al, 1995; Fried, 1996; Minami et al, 2000). This paper describes a digital delay-line architecture that can be used for these applications in a 0.11 /spl mu/m (silicon gate length) CMOS technology. Process variability and sensitivities increase at these geometries and it is difficult to meet target specifications across the entire spread of variations in process, voltages and temperatures (PVT corners). The design methodology presented in this paper minimizes these sensitivities.
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