用8k DMA TEG分析缩放mosfet中“电流起始电压”的统计特性

2010 Silicon Nanoelectronics Workshop Pub Date : 2010-06-13 DOI:10.1109/SNW.2010.5562557

T. Mizutani, Ashok Kumar, T. Tsunomura, A. Nishida, K. Takeuchi, S. Inaba, S. Kamohara, K. Terada, T. Hiramoto

{"title":"用8k DMA TEG分析缩放mosfet中“电流起始电压”的统计特性","authors":"T. Mizutani, Ashok Kumar, T. Tsunomura, A. Nishida, K. Takeuchi, S. Inaba, S. Kamohara, K. Terada, T. Hiramoto","doi":"10.1109/SNW.2010.5562557","DOIUrl":null,"url":null,"abstract":"We report statistic characteristics of a newly found variability component: “current-onset voltage” [1]. It is found that the “current-onset voltage” is hardly correlated with any other parameters such as threshold voltage V<inf>TH</inf>, transconductance G<inf>m</inf> and DIBL. These results indicate that the “current-onset voltage” variability is quite a new type of variation that has never been considered before.","PeriodicalId":6433,"journal":{"name":"2010 Silicon Nanoelectronics Workshop","volume":"3 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Statistic characteristics of “current-onset voltage” in scaled MOSFETs analyzed by 8k DMA TEG\",\"authors\":\"T. Mizutani, Ashok Kumar, T. Tsunomura, A. Nishida, K. Takeuchi, S. Inaba, S. Kamohara, K. Terada, T. Hiramoto\",\"doi\":\"10.1109/SNW.2010.5562557\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report statistic characteristics of a newly found variability component: “current-onset voltage” [1]. It is found that the “current-onset voltage” is hardly correlated with any other parameters such as threshold voltage V<inf>TH</inf>, transconductance G<inf>m</inf> and DIBL. These results indicate that the “current-onset voltage” variability is quite a new type of variation that has never been considered before.\",\"PeriodicalId\":6433,\"journal\":{\"name\":\"2010 Silicon Nanoelectronics Workshop\",\"volume\":\"3 1\",\"pages\":\"1-2\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-06-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 Silicon Nanoelectronics Workshop\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SNW.2010.5562557\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 Silicon Nanoelectronics Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SNW.2010.5562557","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 5

摘要

我们报告了一个新发现的可变性成分的统计特征:“电流起始电压”[1]。发现“电流起始电压”与阈值电压VTH、跨导Gm和DIBL等参数几乎没有相关性。这些结果表明，“电流起始电压”变异性是一种以前从未考虑过的新型变异性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Statistic characteristics of “current-onset voltage” in scaled MOSFETs analyzed by 8k DMA TEG

We report statistic characteristics of a newly found variability component: “current-onset voltage” [1]. It is found that the “current-onset voltage” is hardly correlated with any other parameters such as threshold voltage VTH, transconductance Gm and DIBL. These results indicate that the “current-onset voltage” variability is quite a new type of variation that has never been considered before.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2010 Silicon Nanoelectronics Workshop

自引率

0.00%

发文量