用8k DMA TEG分析缩放mosfet中“电流起始电压”的统计特性

T. Mizutani, Ashok Kumar, T. Tsunomura, A. Nishida, K. Takeuchi, S. Inaba, S. Kamohara, K. Terada, T. Hiramoto
{"title":"用8k DMA TEG分析缩放mosfet中“电流起始电压”的统计特性","authors":"T. Mizutani, Ashok Kumar, T. Tsunomura, A. Nishida, K. Takeuchi, S. Inaba, S. Kamohara, K. Terada, T. Hiramoto","doi":"10.1109/SNW.2010.5562557","DOIUrl":null,"url":null,"abstract":"We report statistic characteristics of a newly found variability component: “current-onset voltage” [1]. It is found that the “current-onset voltage” is hardly correlated with any other parameters such as threshold voltage V<inf>TH</inf>, transconductance G<inf>m</inf> and DIBL. These results indicate that the “current-onset voltage” variability is quite a new type of variation that has never been considered before.","PeriodicalId":6433,"journal":{"name":"2010 Silicon Nanoelectronics Workshop","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2010-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Statistic characteristics of “current-onset voltage” in scaled MOSFETs analyzed by 8k DMA TEG\",\"authors\":\"T. Mizutani, Ashok Kumar, T. Tsunomura, A. Nishida, K. Takeuchi, S. Inaba, S. Kamohara, K. Terada, T. Hiramoto\",\"doi\":\"10.1109/SNW.2010.5562557\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report statistic characteristics of a newly found variability component: “current-onset voltage” [1]. It is found that the “current-onset voltage” is hardly correlated with any other parameters such as threshold voltage V<inf>TH</inf>, transconductance G<inf>m</inf> and DIBL. These results indicate that the “current-onset voltage” variability is quite a new type of variation that has never been considered before.\",\"PeriodicalId\":6433,\"journal\":{\"name\":\"2010 Silicon Nanoelectronics Workshop\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-06-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 Silicon Nanoelectronics Workshop\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SNW.2010.5562557\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 Silicon Nanoelectronics Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SNW.2010.5562557","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

摘要

我们报告了一个新发现的可变性成分的统计特征:“电流起始电压”[1]。发现“电流起始电压”与阈值电压VTH、跨导Gm和DIBL等参数几乎没有相关性。这些结果表明,“电流起始电压”变异性是一种以前从未考虑过的新型变异性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Statistic characteristics of “current-onset voltage” in scaled MOSFETs analyzed by 8k DMA TEG
We report statistic characteristics of a newly found variability component: “current-onset voltage” [1]. It is found that the “current-onset voltage” is hardly correlated with any other parameters such as threshold voltage VTH, transconductance Gm and DIBL. These results indicate that the “current-onset voltage” variability is quite a new type of variation that has never been considered before.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信