维数对SnSe电子性质的影响:密度泛函理论研究

F. A. Noor, E. B. Yutomo, T. Winata
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引用次数: 0

摘要

本研究利用密度泛函理论(DFT)方法研究了块体、双层和单层SnSe的结构和电子特性。我们成功地计算了带隙,并使用广义梯度近似准确地识别了带结构从体到单层的转变。当体积尺寸减小到单层时,观察到晶格参数a的增加和晶格参数b的减少。当系统维数减少时,范德华相互作用的减少是引起晶格参数变化的主要因素。块体SnSe (0.56 eV, 0.3∆→0.7Σ)的间接带隙在单层体系(0.94 eV, 0.2∆→0.8Σ)中变宽。由于低维系统中量子约束效应的出现,预测了带隙的扩大。此外,我们发现在单层SnSe中形成了准简并最小导带。随着这些能带的形成,我们预测单层SnSe将比体层或双层体系具有更好的热电性能。本研究深入了解了SnSe的电子结构及其与热电性质的关系。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effect of Dimensionality on The Electronic Properties of SnSe: A Density Functional Theory Study
This study investigated the structural and electronic properties of bulk, bilayer, and monolayer SnSe using the density functional theory (DFT) method. We succeeded in calculating the bandgap and identifying accurately the transformation of the band structure from bulk to monolayer systems using generalized gradient approximation. An increase in the lattice parameter a and a decrease in the lattice parameter b were observed when the bulk dimensions were reduced to a monolayer. The reduction of van der Waals interactions when the dimensions of a system are reduced is the main factor that causes changes in lattice parameters. The indirect bandgap of bulk SnSe (0.56 eV, 0.3∆→0.7Σ) becomes wider in the monolayer system (0.94 eV, 0.2∆→0.8Σ). Bandgap widening is predicted due to the emergence of the quantum confinement effect in low-dimensional systems. Furthermore, we found the formation of a quasi-degenerate minimum conduction band in the monolayer SnSe. With the formation of these bands, we predict the monolayer SnSe will have better thermoelectric properties than the bulk or bilayer system. This study provides an in-depth understanding of the electronic structure of SnSe and its correlation to thermoelectric properties.
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