T. Jung, M. Fujita, Jeong Cho, Kyung-Hoon Lee, D. Seol, Sung-Jin An, Chanhee Lee, Youjin Jeong, Minji Jung, Sachoun Park, Seungki Baek, Seungki Jung, Seunghwan Lee, Jungbin Yun, E. Shim, Heetak Han, Eunkyung Park, Haesick Sul, Se-Won Kang, Kyungho Lee, JungChak Ahn, Duckhyun Chang
{"title":"采用0.5μm间距全深度深沟隔离技术的1.0μm双向双像素1/1.57英寸50Mpixel CMOS图像传感器","authors":"T. Jung, M. Fujita, Jeong Cho, Kyung-Hoon Lee, D. Seol, Sung-Jin An, Chanhee Lee, Youjin Jeong, Minji Jung, Sachoun Park, Seungki Baek, Seungki Jung, Seunghwan Lee, Jungbin Yun, E. Shim, Heetak Han, Eunkyung Park, Haesick Sul, Se-Won Kang, Kyungho Lee, JungChak Ahn, Duckhyun Chang","doi":"10.1109/ISSCC42614.2022.9731567","DOIUrl":null,"url":null,"abstract":"As the strong demand for higher resolution and new functionality is rapidly increasing in the mobile CMOS Image Sensor (CIS) market, we have seen the emergence of: submicron pixels, >200M pixels, fast readout, global shutter, high dynamic range, and phase-detection autofocus (PDAF) [1 – 3]. Among these, PDAF is an essential feature of cutting-edge CIS for accurate autofocus at extremely low-light situations, and dual-pixel technology has been widely used for AF of the entire image area [4]. To implement high pixel resolution in a limited optical size, the pixel size has continued to shrink, and the pixel structure has evolved to maintain high image quality. However, for a dual pixel, integrating two photodiodes (PDs) in one pixel by backside deep trench isolation (BDTI) has technical limitations and causes degradation of image AF performance as well as image quality.","PeriodicalId":6830,"journal":{"name":"2022 IEEE International Solid- State Circuits Conference (ISSCC)","volume":"1 1","pages":"102-104"},"PeriodicalIF":0.0000,"publicationDate":"2022-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A 1/1.57-inch 50Mpixel CMOS Image Sensor With 1.0μm All-Directional Dual Pixel by 0.5μm-Pitch Full-Depth Deep-Trench Isolation Technology\",\"authors\":\"T. Jung, M. Fujita, Jeong Cho, Kyung-Hoon Lee, D. Seol, Sung-Jin An, Chanhee Lee, Youjin Jeong, Minji Jung, Sachoun Park, Seungki Baek, Seungki Jung, Seunghwan Lee, Jungbin Yun, E. Shim, Heetak Han, Eunkyung Park, Haesick Sul, Se-Won Kang, Kyungho Lee, JungChak Ahn, Duckhyun Chang\",\"doi\":\"10.1109/ISSCC42614.2022.9731567\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"As the strong demand for higher resolution and new functionality is rapidly increasing in the mobile CMOS Image Sensor (CIS) market, we have seen the emergence of: submicron pixels, >200M pixels, fast readout, global shutter, high dynamic range, and phase-detection autofocus (PDAF) [1 – 3]. Among these, PDAF is an essential feature of cutting-edge CIS for accurate autofocus at extremely low-light situations, and dual-pixel technology has been widely used for AF of the entire image area [4]. To implement high pixel resolution in a limited optical size, the pixel size has continued to shrink, and the pixel structure has evolved to maintain high image quality. However, for a dual pixel, integrating two photodiodes (PDs) in one pixel by backside deep trench isolation (BDTI) has technical limitations and causes degradation of image AF performance as well as image quality.\",\"PeriodicalId\":6830,\"journal\":{\"name\":\"2022 IEEE International Solid- State Circuits Conference (ISSCC)\",\"volume\":\"1 1\",\"pages\":\"102-104\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-02-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE International Solid- State Circuits Conference (ISSCC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC42614.2022.9731567\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE International Solid- State Circuits Conference (ISSCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC42614.2022.9731567","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 1/1.57-inch 50Mpixel CMOS Image Sensor With 1.0μm All-Directional Dual Pixel by 0.5μm-Pitch Full-Depth Deep-Trench Isolation Technology
As the strong demand for higher resolution and new functionality is rapidly increasing in the mobile CMOS Image Sensor (CIS) market, we have seen the emergence of: submicron pixels, >200M pixels, fast readout, global shutter, high dynamic range, and phase-detection autofocus (PDAF) [1 – 3]. Among these, PDAF is an essential feature of cutting-edge CIS for accurate autofocus at extremely low-light situations, and dual-pixel technology has been widely used for AF of the entire image area [4]. To implement high pixel resolution in a limited optical size, the pixel size has continued to shrink, and the pixel structure has evolved to maintain high image quality. However, for a dual pixel, integrating two photodiodes (PDs) in one pixel by backside deep trench isolation (BDTI) has technical limitations and causes degradation of image AF performance as well as image quality.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
