Sio2薄膜对Zno/Sic结构中瑞利波特性的影响分析

Liu Zhirong, Liqiang Xie, Mine Zhu, Bao Wenqi
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引用次数: 0

摘要

采用有限元法分析了SiO2薄膜对ZnO/SiC结构相速度和机电耦合系数的影响。结果表明:中间SiO2膜层降低了瑞利波相速度,显著提高了机电耦合系数;当SiO2膜层厚度大于ZnO膜层厚度时,瑞利波相速度增大。反之,瑞利波相速度减小。机电耦合系数先增大后减小。这些结论对高相速、高机电耦合系数表面声波器件的研制具有指导意义。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Analysis of the Effect of Sio2 Film on the Characteristics of Rayleigh Wave in Zno/Sic Structure
The influence of SiO2 film on the phase velocity and the electromechanical coupling coefficient of ZnO/SiC structure was analyzed by finite element method. The results show that the middle SiO2 film layer reduces the phase velocity of Rayleigh wave and significantly increases the electromechanical coupling coefficient. When the top SiO2 film layer thickness is larger than the ZnO film thickness, the Rayleigh wave phase velocity increases. Otherwise, the Rayleigh wave phase velocity decreases. The electromechanical coupling coefficient increases first and then decreases. These conclusions can guide the development of surface acoustic wave devices with high phase velocity and high electromechanical coupling coefficient.
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