为物联网应用设计稳定性更高的12T SRAM

M. Reddy, Deepakkumar Panda
{"title":"为物联网应用设计稳定性更高的12T SRAM","authors":"M. Reddy, Deepakkumar Panda","doi":"10.1109/AISP53593.2022.9760666","DOIUrl":null,"url":null,"abstract":"IOT (Internet of Things) devices such as connected appliances,smart home security systems,wireless inventory trackers,ultra-high speed wireless internet etc. are a gravitating topic of research. In the trending electronic market we do have number of IOT devices flourishing. The IOT application requires such as compactness, lightness, manageability, form-factor, weight, etc. recite the hallmark of such devices. Tiny, slight, movable, and light weight Internet of Things devices use either rechargeable or Non-rechargeable and avoid the utilization of sources such as primary energy one’s. Because the lifespan of batteries and renewal span are condemnatory problems in battery-operated or partly energy-harvested IOT devices, ultralow-power(UL-P) system-on-chips (So-C) are becoming a extensive solution of chipmakers’ option. These kind of UL-P So-C needs logic as well as Static RAM in the processor to perform at low supply voltage’s. The proposed 12MOSFET SRAM(12T) proves itself operating at very low Supply Voltage. The reproving design metrics of introduced 12MOSFET SRAM Bit-Cell are calculated and differentiated with that of (6MOSFET) CON6T, (7MOSFET)CON7T, (8MOSFET)CON8T and (12MOSFET)CON12T SRAM Bit Cell. The RSNM of introduced 12MOSFET Static RAM Bit Cell reaches $1.7 \\times$ excessive as differentiated to 7MOSFET and 8MOSFET and rests identical as CON12T. The WSNM of introduced 12MOSFET SRAM Bit Cell reaches $1.8 \\times$ excessive as differentiated to 8MOSFET//7MOSFET and $1.4 \\times$ excessive differentiated to CON12T.The introduced 12MOSFET SRAM Bit Cell absorb $0.6127 \\times$ lower accessing power as compared to 8MOSFET and $0.4637 \\times$ lower accessing power compared to 7MOSFET and $0.253 \\times$ low accessing power compared to CON12T.The power of introduced 12MOSFET in Hold mode reaches $0.0499/0.055/ 0.0499 \\times$ lesser as differentiated to 7MOSFET/ 8MOSFET/ CON12T. EQM of 12MOSFET, as it represents the entire performance of SRAM, is greater when compared with remaining conventional methods.","PeriodicalId":6793,"journal":{"name":"2022 2nd International Conference on Artificial Intelligence and Signal Processing (AISP)","volume":"15 1","pages":"1-6"},"PeriodicalIF":0.0000,"publicationDate":"2022-02-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design of 12T SRAM with improved stability for IOT application\",\"authors\":\"M. Reddy, Deepakkumar Panda\",\"doi\":\"10.1109/AISP53593.2022.9760666\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"IOT (Internet of Things) devices such as connected appliances,smart home security systems,wireless inventory trackers,ultra-high speed wireless internet etc. are a gravitating topic of research. In the trending electronic market we do have number of IOT devices flourishing. The IOT application requires such as compactness, lightness, manageability, form-factor, weight, etc. recite the hallmark of such devices. Tiny, slight, movable, and light weight Internet of Things devices use either rechargeable or Non-rechargeable and avoid the utilization of sources such as primary energy one’s. Because the lifespan of batteries and renewal span are condemnatory problems in battery-operated or partly energy-harvested IOT devices, ultralow-power(UL-P) system-on-chips (So-C) are becoming a extensive solution of chipmakers’ option. These kind of UL-P So-C needs logic as well as Static RAM in the processor to perform at low supply voltage’s. The proposed 12MOSFET SRAM(12T) proves itself operating at very low Supply Voltage. The reproving design metrics of introduced 12MOSFET SRAM Bit-Cell are calculated and differentiated with that of (6MOSFET) CON6T, (7MOSFET)CON7T, (8MOSFET)CON8T and (12MOSFET)CON12T SRAM Bit Cell. The RSNM of introduced 12MOSFET Static RAM Bit Cell reaches $1.7 \\\\times$ excessive as differentiated to 7MOSFET and 8MOSFET and rests identical as CON12T. The WSNM of introduced 12MOSFET SRAM Bit Cell reaches $1.8 \\\\times$ excessive as differentiated to 8MOSFET//7MOSFET and $1.4 \\\\times$ excessive differentiated to CON12T.The introduced 12MOSFET SRAM Bit Cell absorb $0.6127 \\\\times$ lower accessing power as compared to 8MOSFET and $0.4637 \\\\times$ lower accessing power compared to 7MOSFET and $0.253 \\\\times$ low accessing power compared to CON12T.The power of introduced 12MOSFET in Hold mode reaches $0.0499/0.055/ 0.0499 \\\\times$ lesser as differentiated to 7MOSFET/ 8MOSFET/ CON12T. EQM of 12MOSFET, as it represents the entire performance of SRAM, is greater when compared with remaining conventional methods.\",\"PeriodicalId\":6793,\"journal\":{\"name\":\"2022 2nd International Conference on Artificial Intelligence and Signal Processing (AISP)\",\"volume\":\"15 1\",\"pages\":\"1-6\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-02-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 2nd International Conference on Artificial Intelligence and Signal Processing (AISP)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/AISP53593.2022.9760666\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 2nd International Conference on Artificial Intelligence and Signal Processing (AISP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/AISP53593.2022.9760666","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

IOT(物联网)设备,如连接电器,智能家居安全系统,无线库存跟踪器,超高速无线互联网等是一个有吸引力的研究主题。在趋势电子市场中,我们确实有许多物联网设备蓬勃发展。物联网应用要求紧凑、轻便、可管理性、外形尺寸、重量等,这些都是此类设备的特点。小巧、轻巧、可移动、重量轻的物联网设备使用可充电或不可充电,避免使用一次能源等资源。在电池供电或部分能量收集的物联网设备中,电池寿命和更新时间是一个严重的问题,因此超低功耗(UL-P)片上系统(So-C)正成为芯片制造商的广泛解决方案。这种类型的UL-P So-C需要逻辑以及处理器中的静态RAM来在低电源电压下执行。所提出的12MOSFET SRAM(12T)证明自己在非常低的电源电压下工作。计算了引入的12MOSFET SRAM位单元的改进设计指标,并与(6MOSFET) CON6T、(7MOSFET)CON7T、(8MOSFET)CON8T和(12MOSFET)CON12T SRAM位单元的改进设计指标进行了区分。引入的12MOSFET静态RAM位单元的RSNM与7MOSFET和8MOSFET的RSNM相差1.7倍,与CON12T相同。引入的12MOSFET SRAM位单元的WSNM在分化为8MOSFET//7MOSFET时达到$1.8 \times excess,分化为CON12T时达到$1.4 \times excess。与8MOSFET相比,引入的12MOSFET SRAM位单元的存取功率降低了0.6127美元,与7MOSFET相比,存取功率降低了0.4637美元,与CON12T相比,存取功率降低了0.253美元。与7MOSFET/ 8MOSFET/ CON12T相比,在保持模式下引入的12MOSFET功率达到0.0499/0.055/ 0.0499 \ $。与其他传统方法相比,12MOSFET的EQM更大,因为它代表了SRAM的全部性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design of 12T SRAM with improved stability for IOT application
IOT (Internet of Things) devices such as connected appliances,smart home security systems,wireless inventory trackers,ultra-high speed wireless internet etc. are a gravitating topic of research. In the trending electronic market we do have number of IOT devices flourishing. The IOT application requires such as compactness, lightness, manageability, form-factor, weight, etc. recite the hallmark of such devices. Tiny, slight, movable, and light weight Internet of Things devices use either rechargeable or Non-rechargeable and avoid the utilization of sources such as primary energy one’s. Because the lifespan of batteries and renewal span are condemnatory problems in battery-operated or partly energy-harvested IOT devices, ultralow-power(UL-P) system-on-chips (So-C) are becoming a extensive solution of chipmakers’ option. These kind of UL-P So-C needs logic as well as Static RAM in the processor to perform at low supply voltage’s. The proposed 12MOSFET SRAM(12T) proves itself operating at very low Supply Voltage. The reproving design metrics of introduced 12MOSFET SRAM Bit-Cell are calculated and differentiated with that of (6MOSFET) CON6T, (7MOSFET)CON7T, (8MOSFET)CON8T and (12MOSFET)CON12T SRAM Bit Cell. The RSNM of introduced 12MOSFET Static RAM Bit Cell reaches $1.7 \times$ excessive as differentiated to 7MOSFET and 8MOSFET and rests identical as CON12T. The WSNM of introduced 12MOSFET SRAM Bit Cell reaches $1.8 \times$ excessive as differentiated to 8MOSFET//7MOSFET and $1.4 \times$ excessive differentiated to CON12T.The introduced 12MOSFET SRAM Bit Cell absorb $0.6127 \times$ lower accessing power as compared to 8MOSFET and $0.4637 \times$ lower accessing power compared to 7MOSFET and $0.253 \times$ low accessing power compared to CON12T.The power of introduced 12MOSFET in Hold mode reaches $0.0499/0.055/ 0.0499 \times$ lesser as differentiated to 7MOSFET/ 8MOSFET/ CON12T. EQM of 12MOSFET, as it represents the entire performance of SRAM, is greater when compared with remaining conventional methods.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信