{"title":"非晶硅应变片的温度补偿","authors":"S.G. Ferguson, W.E. Spear","doi":"10.1016/0250-6874(89)80123-4","DOIUrl":null,"url":null,"abstract":"<div><p>The applied potential of amorphous silicon as a strain gauge material has been investigated. Measurements of the gauge factor, <em>K</em>, were carried out on a-Si/a-SiN<sub><em>x</em></sub> thin-film structures deposited from a glow discharge plasma on polished stainless steel substrates. The conductance changes of phosphorus-doped a-Si under uniaxial strain lead to room temperature <em>K</em> values between −20 and −40, depending on the potential applied to the substrate. The control of <em>K</em> by the field effect makes it possible in principle to compensate for the temperature coefficients of the gauge factor.</p></div>","PeriodicalId":101159,"journal":{"name":"Sensors and Actuators","volume":"20 3","pages":"Pages 249-251"},"PeriodicalIF":0.0000,"publicationDate":"1989-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0250-6874(89)80123-4","citationCount":"2","resultStr":"{\"title\":\"Temperature compensation of amorphous silicon strain gauges\",\"authors\":\"S.G. Ferguson, W.E. Spear\",\"doi\":\"10.1016/0250-6874(89)80123-4\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The applied potential of amorphous silicon as a strain gauge material has been investigated. Measurements of the gauge factor, <em>K</em>, were carried out on a-Si/a-SiN<sub><em>x</em></sub> thin-film structures deposited from a glow discharge plasma on polished stainless steel substrates. The conductance changes of phosphorus-doped a-Si under uniaxial strain lead to room temperature <em>K</em> values between −20 and −40, depending on the potential applied to the substrate. The control of <em>K</em> by the field effect makes it possible in principle to compensate for the temperature coefficients of the gauge factor.</p></div>\",\"PeriodicalId\":101159,\"journal\":{\"name\":\"Sensors and Actuators\",\"volume\":\"20 3\",\"pages\":\"Pages 249-251\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1989-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/0250-6874(89)80123-4\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Sensors and Actuators\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/0250687489801234\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Sensors and Actuators","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/0250687489801234","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
摘要
探讨了非晶硅作为应变片材料的应用潜力。测量了光放电等离子体在抛光不锈钢衬底上沉积的a- si /a- sinx薄膜结构的测量因子K。单轴应变下掺磷a-Si的电导变化导致室温K值在- 20和- 40之间，这取决于施加在衬底上的电位。通过场效应对K的控制，原则上可以补偿规范因子的温度系数。
Temperature compensation of amorphous silicon strain gauges
The applied potential of amorphous silicon as a strain gauge material has been investigated. Measurements of the gauge factor, K, were carried out on a-Si/a-SiNx thin-film structures deposited from a glow discharge plasma on polished stainless steel substrates. The conductance changes of phosphorus-doped a-Si under uniaxial strain lead to room temperature K values between −20 and −40, depending on the potential applied to the substrate. The control of K by the field effect makes it possible in principle to compensate for the temperature coefficients of the gauge factor.
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