量子处理中硅和金刚石材料的确定性掺杂

2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2016-11-21 DOI:10.1109/NANO.2016.7751573

T. Shinada, E. Prati, T. Tanii, T. Teraji, S. Onoda, F. Jelezko, J. Isoya

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引用次数: 3

摘要

纳米级电子器件将需要在预定位置放置掺杂剂，即单个原子控制，以探索未来纳米电子学的新功能。确定性掺杂方法，即单离子注入，在硅、金刚石等材料中实现了单原子的有序排列，这可能为有利于量子处理的单掺杂输运或单光子源提供机会。

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Deterministic doping to silicon and diamond materials for quantum processing

Nanoscale electronic devices will require the placement of dopants in a predetermined location, namely, a single atom control to explore novel functions for future nanoelectronics. Deterministic doping method, i.e. single-ion implantation, realizes ordered arrays of single-atoms in silicon, diamond and other materials, which might provide opportunities to single-dopant transport or single-photon source beneficial to quantum processing.

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2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)

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