用于MEMS悬臂应用的射频溅射PZT薄膜的优化

2012 1st International Symposium on Physics and Technology of Sensors (ISPTS-1) Pub Date : 2012-03-07 DOI:10.1109/ISPTS.2012.6260913

A. Joshi, S. Gangal, D. Bodas, J. Rauch

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引用次数: 1

摘要

本文讨论了用于MEMS的射频溅射PZT薄膜的厚度和化学计量学优化。利用EDS和XPS技术研究了溅射参数对PZT薄膜化学计量的影响。在单次溅射循环中获得了Zr:Ti比为52∶48的600 nm PZT薄膜。采用传统的炉内退火技术对薄膜进行退火，并用XRD技术研究了退火工艺对相形成的影响。优化后的PZT薄膜具有良好的化学计量性能。在最佳参数下沉积的PZT薄膜的压电系数d33为450pm/V。利用优化后的PZT薄膜参数，采用硅体微加工技术成功制备了悬臂梁。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Optimization of RF sputtered PZT thin films for MEMS cantilever application

Optimization of RF sputtered piezoelectric PZT thin films for thickness and stoichiometry for use in MEMS application is discussed in this paper. The effect of sputtering parameters on PZT film stoichiometry is studied using EDS and XPS techniques. 600 nm thin PZT film with Zr:Ti ratio of 52∶48 is achieved in single sputtering cycle. The film is annealed using conventional furnace annealing technique and the effect of annealing process on phase formation is studied using XRD technique. The optimized PZT thin film shows sufficiently good stoichiometry. A piezoelectric coefficient (d33) value for PZT thin film deposited at optimum parameters is 450pm/V. Optimized PZT thin film parameters are used for successful fabrication of cantilever using silicon bulk micromachining.

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2012 1st International Symposium on Physics and Technology of Sensors (ISPTS-1)

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