在NVRAM中通过智能覆盖保存位翻转

Pub Date : 2022-01-01 DOI:10.36244/icj.2022.4.5
A. Kulandai, Thomas Schwarz
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引用次数: 0

摘要

新一代的非易失性随机存取存储器将结合存储器的最佳特性(访问时间、字节可寻址性)和存储器的最佳特性(非易失性、每字节低成本)。有些,如PCM,有一个有限的持久性。所有这些都只在被访问时消耗能量,但是写比读消耗更多的能量。这些特性增加了在内存中翻转比特的成本。位翻转感知数据结构通过使用位图而不是将字段重置为零来表示已删除的记录,从而降低了翻转的位数。如果可以选择在哪里重写数据,它们会选择导致比特翻转次数较少的位置。我们计算了该策略的预期比特翻转节省,并推导了一个规则来确定可能的候选位置的数量。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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Saving Bit-flips through Smart Overwrites in NVRAM
New generations of non-volatile random access memories will combine the best features of memory (access times, byte addressability) with the best features of storage (non-volatility, low costs per byte). Some, like PCM, have a limited endurance. All will only consume energy when accessed, but writes will use much more energy than reads. These characteristics put a cost on flipping bits in memory. Bit-flip aware data structures lower the number of bits flipped by not resetting fields to zero to indicate a deleted record but by using bit-maps. If given a choice of where to over-write data, they will select the location which results in a lower number of bit-flips. We calculate the expected bit-flip savings of this strategy and derive a rule to determine the number of the possible candidate locations.
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