一个0.1pJ/b的5- 10gb /s电荷回收堆叠低功耗I/O,用于45nm CMOS SOI的片上信号

Yong Liu, Ping-Hsuan Hsieh, Seongwon Kim, Jae-sun Seo, R. Montoye, Leland Chang, J. Tierno, D. Friedman
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引用次数: 15

摘要

处理器芯片需要紧凑的低功耗信令方案来驱动片上互连,其中高带宽数据总线连接处理器内核和片上缓存。由于很大一部分信号功率是用于驱动长导线的动态功率,因此减少信号摆动可以提高功率效率[1-3]。此外,电荷回收技术通过堆叠具有规律和可预测的数据交换活动的电路来减少信号摆动,如逻辑电路[4]和时钟电路[5]。与传统方案不同,利用电荷回收技术的低摆幅I/O提供了二次功耗降低的潜力。我们提出了一个紧凑的低功耗I/O片上信号使用电荷回收堆叠驱动器和紧凑的电压调节器/转换器。从基于参数放大器的设计中改进的接收电路[6]进一步提高了面积和功率效率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 0.1pJ/b 5-to-10Gb/s charge-recycling stacked low-power I/O for on-chip signaling in 45nm CMOS SOI
Compact low-power signaling schemes to drive on-chip interconnects are needed for processor chips where high-bandwidth data buses connect processor cores and on-chip cache. Since a significant portion of the signaling power is dynamic power spent on driving long wires, reducing the signal swing improves power efficiency [1-3]. In addition, charge-recycling techniques reduce signal swing by stacking circuits with regular and predictable data switching activities, such as logic circuits [4] and clocking circuits [5]. Unlike conventional schemes, low-swing I/O that leverages charge-recycling techniques offers the potential for quadratic power reduction. We present a compact low-power I/O for on-chip signaling using charge-recycling stacked drivers and compact voltage regulators/converters. A receiver circuit modified from a parametric amplifier-based design [6] further improves the area and power efficiency.
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