外延基硅锗异质结双极晶体管的静电放电和大电流脉冲特性

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) Pub Date : 2000-01-01 DOI:10.1109/RELPHY.2000.843932

S. Voldman, P. Juliano, R. Johnson, N. Schmidt, A. Joseph, S. Furkay, E. Rosenbaum, J. Dunn, D. Harame, B. Meyerson

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引用次数: 31

摘要

研究了假晶外延基硅锗(SiGe)异质结双极晶体管(HBT)中的大电流静电放电现象。完成了SiGe HBT器件的传输线脉冲(TLP)和ESD人体模型(HBM)晶圆级可靠性测试、失效分析和仿真，对BiCMOS SiGe技术的ESD稳健性进行了大电流表征和评估。

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Electrostatic discharge and high current pulse characterization of epitaxial-base silicon-germanium heterojunction bipolar transistors

This paper investigates high-current and electrostatic discharge (ESD) phenomenon in pseudomorphic epitaxial-base silicon-germanium (SiGe) heterojunction bipolar transistors (HBT). Transmission line pulse (TLP) and ESD human body model (HBM) wafer-level reliability testing, failure analysis and simulation of SiGe HBT devices is completed for high-current characterization and evaluation of the ESD robustness of a BiCMOS SiGe technology.

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来源期刊

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)

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