共沉淀法合成硫化锌薄膜的结构与光电性能

IF 0.4 Q4 CHEMISTRY, MULTIDISCIPLINARY
V. Choudapur, S. B. Kapatkar, A. Raju
{"title":"共沉淀法合成硫化锌薄膜的结构与光电性能","authors":"V. Choudapur, S. B. Kapatkar, A. Raju","doi":"10.2478/achi-2019-0018","DOIUrl":null,"url":null,"abstract":"Abstract Wide bandgap Zinc Sulfide nanocrystals are prepared by a simple co-precipitation method at different precursor concentrations. The influence of sulphur concentration in Zinc sulfide on morphological, optical and electric properties is found to be significant. The Zinc Sulfide nanomaterial was prepared using low-cost starting materials and deionised water as the solvent. As synthesized Zinc Sulfide nanocrystals were analyzed using X-ray diffraction (XRD), Energy Dispersive Spectroscopy (EDS) analysis, UV-Visible Spectrophotometry, Photoluminescence (PL), Scanning electron Microscopy (SEM), Ellipsometry techniques and electric conductivity measurements. XRD patterns revealed that ZnS nanocrystals are polycrystalline, cubic phase with (111) preferred orientation. The obtained crystallites have sizes in the range of 5 to 11 nm. EDS pattern confirms the purity of the films. From optical absorption measurements, it is clear that the direct energy gap decreases from 5.2 to 4.4eV with the increase in sulphur concentration in ZnS and exhibit large quantum confinement effect. Ellipsometry was used to determine the optical constants and film thickness. The films deposited on ITO – coated glass was used to record the IV Characteristics of the films by two probe method. The wide-bandgap, conducting materials have applications in optoelectronic devices such as high-frequency UV detectors and thin-film solar cells.","PeriodicalId":6958,"journal":{"name":"Acta Chemica Iasi","volume":"1 1","pages":"287 - 302"},"PeriodicalIF":0.4000,"publicationDate":"2019-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"Structural and Optoelectronic Properties of Zinc Sulfide Thin Films Synthesized by Co-Precipitation Method\",\"authors\":\"V. Choudapur, S. B. Kapatkar, A. Raju\",\"doi\":\"10.2478/achi-2019-0018\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Abstract Wide bandgap Zinc Sulfide nanocrystals are prepared by a simple co-precipitation method at different precursor concentrations. The influence of sulphur concentration in Zinc sulfide on morphological, optical and electric properties is found to be significant. The Zinc Sulfide nanomaterial was prepared using low-cost starting materials and deionised water as the solvent. As synthesized Zinc Sulfide nanocrystals were analyzed using X-ray diffraction (XRD), Energy Dispersive Spectroscopy (EDS) analysis, UV-Visible Spectrophotometry, Photoluminescence (PL), Scanning electron Microscopy (SEM), Ellipsometry techniques and electric conductivity measurements. XRD patterns revealed that ZnS nanocrystals are polycrystalline, cubic phase with (111) preferred orientation. The obtained crystallites have sizes in the range of 5 to 11 nm. EDS pattern confirms the purity of the films. From optical absorption measurements, it is clear that the direct energy gap decreases from 5.2 to 4.4eV with the increase in sulphur concentration in ZnS and exhibit large quantum confinement effect. Ellipsometry was used to determine the optical constants and film thickness. The films deposited on ITO – coated glass was used to record the IV Characteristics of the films by two probe method. The wide-bandgap, conducting materials have applications in optoelectronic devices such as high-frequency UV detectors and thin-film solar cells.\",\"PeriodicalId\":6958,\"journal\":{\"name\":\"Acta Chemica Iasi\",\"volume\":\"1 1\",\"pages\":\"287 - 302\"},\"PeriodicalIF\":0.4000,\"publicationDate\":\"2019-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Acta Chemica Iasi\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.2478/achi-2019-0018\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Acta Chemica Iasi","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.2478/achi-2019-0018","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 11

摘要

摘要在不同前驱体浓度下,采用简单共沉淀法制备了宽禁带硫化锌纳米晶体。硫化物中硫的浓度对锌的形态、光学和电学性质的影响是显著的。以低成本原料和去离子水为溶剂制备了硫化锌纳米材料。采用x射线衍射(XRD)、能谱分析(EDS)、紫外可见分光光度法、光致发光(PL)、扫描电镜(SEM)、椭偏技术和电导率测量等方法对合成的硫化锌纳米晶体进行了分析。XRD分析表明,ZnS纳米晶为多晶、立方相、(111)择优取向。所得晶体尺寸在5 ~ 11nm之间。能谱图证实了薄膜的纯度。光学吸收测量表明,随着ZnS中硫浓度的增加,直接能隙从5.2 ev减小到4.4eV,并表现出较大的量子约束效应。采用椭偏法测定了光学常数和膜厚。用双探针法记录了沉积在ITO涂层玻璃上的膜的IV特性。这种宽带隙导电材料在光电器件中有广泛的应用,如高频紫外探测器和薄膜太阳能电池。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Structural and Optoelectronic Properties of Zinc Sulfide Thin Films Synthesized by Co-Precipitation Method
Abstract Wide bandgap Zinc Sulfide nanocrystals are prepared by a simple co-precipitation method at different precursor concentrations. The influence of sulphur concentration in Zinc sulfide on morphological, optical and electric properties is found to be significant. The Zinc Sulfide nanomaterial was prepared using low-cost starting materials and deionised water as the solvent. As synthesized Zinc Sulfide nanocrystals were analyzed using X-ray diffraction (XRD), Energy Dispersive Spectroscopy (EDS) analysis, UV-Visible Spectrophotometry, Photoluminescence (PL), Scanning electron Microscopy (SEM), Ellipsometry techniques and electric conductivity measurements. XRD patterns revealed that ZnS nanocrystals are polycrystalline, cubic phase with (111) preferred orientation. The obtained crystallites have sizes in the range of 5 to 11 nm. EDS pattern confirms the purity of the films. From optical absorption measurements, it is clear that the direct energy gap decreases from 5.2 to 4.4eV with the increase in sulphur concentration in ZnS and exhibit large quantum confinement effect. Ellipsometry was used to determine the optical constants and film thickness. The films deposited on ITO – coated glass was used to record the IV Characteristics of the films by two probe method. The wide-bandgap, conducting materials have applications in optoelectronic devices such as high-frequency UV detectors and thin-film solar cells.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Acta Chemica Iasi
Acta Chemica Iasi CHEMISTRY, MULTIDISCIPLINARY-
自引率
0.00%
发文量
0
审稿时长
12 weeks
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信