薄膜电荷载流子浓度上升

Физика и техника полупроводников Pub Date : 2022-01-01 DOI:10.21883/ftp.2022.02.51952.19

Е. В. Демидов, В. М. Грабов, В.А. Комаров, А. В. Суслов, В. А. Герега, А.Н. Крушельницкий

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引用次数: 0

摘要

讨论了铋薄膜中载流子浓度增加的原因。在假设载流子在薄膜中的自由程是各向同性的前提下，根据在77K温度下测得的电系数和磁系数，在双波段近似下计算出浓度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Рост концентрации носителей заряда в тонких пленках висмута

The reasons for increasing the charge carriers concentration in thin bismuth films are discussed. The concentration was calculated on the basis of the measured electrical and galvanomagnetic coefficients at the temperature 77K under the two-band approximation and the assumption that the charge carriers free path in the film is isotropic.

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Физика и техника полупроводников

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