用于MEMS麦克风的106.7 db DR, 390 μ w CT三阶ΣΔ调制器

ESSCIRC Conference 2015 - 41st European Solid-State Circuits Conference (ESSCIRC) Pub Date : 2015-09-01 DOI:10.1109/ESSCIRC.2015.7313864

C. D. Berti, P. Malcovati, L. Crespi, A. Baschirotto

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引用次数: 5

摘要

采用0.16 μm CMOS技术的3阶连续时间ΣΔ MEMS麦克风调制器在1.6 v电源下功耗390 μW，占用0.21 mm2的面积，可实现106.7 db DR和93.2 db峰值SNDR。ΣΔ调制器基于前馈架构，仅使用两个运算放大器来实现三阶环路滤波器传递函数，一个15级量化器和一个带三电平电流转向元件的反馈DAC，从而最大限度地减少小输入信号时的噪声贡献，从而实现DR > 100 dB和最大的Schreier FoM (184 dB)。

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A 106.7-dB DR, 390-μW CT 3rd-order ΣΔ modulator for MEMS microphones

A 3^rd-order continuous-time ΣΔ modulator for MEMS microphones in 0.16-μm CMOS technology achieves 106.7-dB DR and 93.2-dB peak SNDR, consuming 390 μW from a 1.6-V power supply and occupying an area of 0.21 mm². The ΣΔ modulator, based on a feedforward architecture, uses only two operational amplifiers for achieving the 3^rd-order loop-filter transfer function, a 15-level quantizer, and a feedback DAC with three-level current-steering elements, which minimizes the noise contribution at small input signal, in order to achieve a DR > 100 dB with the largest reported Schreier FoM (184 dB).

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ESSCIRC Conference 2015 - 41st European Solid-State Circuits Conference (ESSCIRC)

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