{"title":"利用逆向建模方法对二维工艺建模所需的点缺陷参数进行实验提取","authors":"E. Shauly, R. Ghez, Y. Komem","doi":"10.1109/ICECS.2004.1399693","DOIUrl":null,"url":null,"abstract":"This work deals with the simulation of two-dimensional impurity diffusion in CMOS silicon devices. The reverse modeling method was used to determine the diffusion coefficient (D/sub I/), surface recombination rate of defects (K/sub I/) and the characteristics of the injecting source. Analysis showed similarity between D/sub I/ in the 2D system compared with the value obtained from non-patterned samples. The results for D/sub I/ and K/sub I/ are very well described by the Arrhenius expressions. D/sub I/ was found to be related to the substrate type e.g. EPI or CZ. The values of K/sub I/ related to the interface type, oxidizing or nonoxidizing (SiO/sub 2/ or Si/sub 3/N/sub 4/).","PeriodicalId":38467,"journal":{"name":"Giornale di Storia Costituzionale","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Experimental extraction of point defects parameters needed for 2-D process modeling using reverse modeling\",\"authors\":\"E. Shauly, R. Ghez, Y. Komem\",\"doi\":\"10.1109/ICECS.2004.1399693\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work deals with the simulation of two-dimensional impurity diffusion in CMOS silicon devices. The reverse modeling method was used to determine the diffusion coefficient (D/sub I/), surface recombination rate of defects (K/sub I/) and the characteristics of the injecting source. Analysis showed similarity between D/sub I/ in the 2D system compared with the value obtained from non-patterned samples. The results for D/sub I/ and K/sub I/ are very well described by the Arrhenius expressions. D/sub I/ was found to be related to the substrate type e.g. EPI or CZ. The values of K/sub I/ related to the interface type, oxidizing or nonoxidizing (SiO/sub 2/ or Si/sub 3/N/sub 4/).\",\"PeriodicalId\":38467,\"journal\":{\"name\":\"Giornale di Storia Costituzionale\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-12-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Giornale di Storia Costituzionale\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICECS.2004.1399693\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"Arts and Humanities\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Giornale di Storia Costituzionale","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICECS.2004.1399693","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"Arts and Humanities","Score":null,"Total":0}
Experimental extraction of point defects parameters needed for 2-D process modeling using reverse modeling
This work deals with the simulation of two-dimensional impurity diffusion in CMOS silicon devices. The reverse modeling method was used to determine the diffusion coefficient (D/sub I/), surface recombination rate of defects (K/sub I/) and the characteristics of the injecting source. Analysis showed similarity between D/sub I/ in the 2D system compared with the value obtained from non-patterned samples. The results for D/sub I/ and K/sub I/ are very well described by the Arrhenius expressions. D/sub I/ was found to be related to the substrate type e.g. EPI or CZ. The values of K/sub I/ related to the interface type, oxidizing or nonoxidizing (SiO/sub 2/ or Si/sub 3/N/sub 4/).
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