NMOSFET热载流子诱导器件退化的仿真方法及应用

ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361) Pub Date : 1999-10-26 DOI:10.1109/ICVC.1999.820818

Sun-Ghil Lee, J. Choi, Sangyong Kim, M. Nam, J. Lee, K. Seo, H. Yoon

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引用次数: 0

摘要

热载流子破坏了硅与栅极氧化物之间的界面，引起电流水平的变化。我们提出了一种模拟热载流子引起的器件退化的方法。在此模型的基础上，利用二维过程仿真TSUPREM-4和二维器件模拟器MEDICI，我们能够计算出随时间衰减的I-V特性。我们将模拟结果与实验结果进行了比较。

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Simulation method and application for the hot carrier-induced device degradation of NMOSFET

Hot carriers deteriorate the interface between Si and gate oxide, which causes the change of current level. We suggest a method for simulating hot carrier-induced device degradation. Based on the present model, we are able to calculate degraded I-V characteristics with time using 2-D process simulation TSUPREM-4 and 2-D device simulator MEDICI. We compare simulated results with experimental ones.

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ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)

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