{"title":"超1X纳米技术节点的CMOS兼容铁电器件","authors":"S. Müller","doi":"10.7567/SSDM.2017.K-5-01","DOIUrl":null,"url":null,"abstract":"10 years have passed since ferroelectricity in hafnium oxide was discovered for the first time. This fundamental breakthrough has initiated significant R&D activities in both industry and in academia. This paper summarizes the potential of ferroelectric HfO2 (FE-HfO2) for memory applications with particular focus on highly scaled CMOS technology nodes. It illustrates that FE-HfO2 might finally enable the entrance of ferroelectric memories into mass markets.","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"052 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2017-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"CMOS Compatible Ferroelectric Devices for Beyond 1X nm Technology Nodes\",\"authors\":\"S. Müller\",\"doi\":\"10.7567/SSDM.2017.K-5-01\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"10 years have passed since ferroelectricity in hafnium oxide was discovered for the first time. This fundamental breakthrough has initiated significant R&D activities in both industry and in academia. This paper summarizes the potential of ferroelectric HfO2 (FE-HfO2) for memory applications with particular focus on highly scaled CMOS technology nodes. It illustrates that FE-HfO2 might finally enable the entrance of ferroelectric memories into mass markets.\",\"PeriodicalId\":22504,\"journal\":{\"name\":\"The Japan Society of Applied Physics\",\"volume\":\"052 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-07-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The Japan Society of Applied Physics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.7567/SSDM.2017.K-5-01\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Japan Society of Applied Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.7567/SSDM.2017.K-5-01","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
CMOS Compatible Ferroelectric Devices for Beyond 1X nm Technology Nodes
10 years have passed since ferroelectricity in hafnium oxide was discovered for the first time. This fundamental breakthrough has initiated significant R&D activities in both industry and in academia. This paper summarizes the potential of ferroelectric HfO2 (FE-HfO2) for memory applications with particular focus on highly scaled CMOS technology nodes. It illustrates that FE-HfO2 might finally enable the entrance of ferroelectric memories into mass markets.
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