掺杂铟氧化锌纳米线的性能研究

2010 International Conference on Enabling Science and Nanotechnology (ESciNano) Pub Date : 2010-12-01 DOI:10.1063/1.3586947

A. Ismardi, T. Y. Tiong, C. Dee, B. Majlis

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引用次数: 0

摘要

采用碳热还原法在石英管中合成了掺杂铟的ZnO纳米线。用FESEM对纳米线进行了形貌表征，结果表明纳米线为六边形结构，直径约为40 ~ 100 nm，长度从数百纳米到几微米不等。EDX也用于材料的组成，所有的成分都在光谱中发现。然后用XRD检查结构的结晶度。测定了ZnO纳米线的电性能。结果表明，与未掺杂ZnO纳米线相比，掺杂铟的ZnO纳米线具有更低的电阻率。还进行了气敏表征。

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Study of the properties of indium doped ZnO nanowires

Indium doped ZnO nanowires were synthesized by carbothermal reduction method in a quartz tube. The nanowires were characterized by FESEM for morphological structure, the results showed a hexagonal structure with diameter around 40 – 100 nm, and lengths from hundreds of nanometers to a few microns. EDX was also used for materials composition and all the composition were found in the spectrum. XRD was then used for checking crystallinity of the structure. ZnO nanowires were than measured for electrical properties. The results show that the indium doped ZnO nanowires has lower resistivity compare to the undoped ZnO nanowires. Gas sensing characterization has also been performed.

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2010 International Conference on Enabling Science and Nanotechnology (ESciNano)

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