{"title":"嵌入式非易失性存储器应用的PCM方法","authors":"P. Zuliani, A. Conte, P. Cappelletti","doi":"10.23919/VLSIT.2019.8776502","DOIUrl":null,"url":null,"abstract":"A comparative analysis of different Resistive Memories proposed as Non Volatile Memories for embedded applications is here presented. Based on today scenario of industry-standard Floating Gate solutions, key factors as performances, reliability and technology maturity are considered when facing more innovative memory cells. In particular the race seems to be open at 28nm, where different players are proposing different memories integrated in the Back End Of the Line. Original results obtained on multi-megabits array integrating Phase Change Memories are here discussed covering cell scalability, High Temperature data retention and extended endurance capability, all in line with eNVM application requirements.","PeriodicalId":6752,"journal":{"name":"2019 Symposium on VLSI Technology","volume":"1 1","pages":"T192-T193"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"The PCM way for embedded Non Volatile Memories applications\",\"authors\":\"P. Zuliani, A. Conte, P. Cappelletti\",\"doi\":\"10.23919/VLSIT.2019.8776502\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A comparative analysis of different Resistive Memories proposed as Non Volatile Memories for embedded applications is here presented. Based on today scenario of industry-standard Floating Gate solutions, key factors as performances, reliability and technology maturity are considered when facing more innovative memory cells. In particular the race seems to be open at 28nm, where different players are proposing different memories integrated in the Back End Of the Line. Original results obtained on multi-megabits array integrating Phase Change Memories are here discussed covering cell scalability, High Temperature data retention and extended endurance capability, all in line with eNVM application requirements.\",\"PeriodicalId\":6752,\"journal\":{\"name\":\"2019 Symposium on VLSI Technology\",\"volume\":\"1 1\",\"pages\":\"T192-T193\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 Symposium on VLSI Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/VLSIT.2019.8776502\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/VLSIT.2019.8776502","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The PCM way for embedded Non Volatile Memories applications
A comparative analysis of different Resistive Memories proposed as Non Volatile Memories for embedded applications is here presented. Based on today scenario of industry-standard Floating Gate solutions, key factors as performances, reliability and technology maturity are considered when facing more innovative memory cells. In particular the race seems to be open at 28nm, where different players are proposing different memories integrated in the Back End Of the Line. Original results obtained on multi-megabits array integrating Phase Change Memories are here discussed covering cell scalability, High Temperature data retention and extended endurance capability, all in line with eNVM application requirements.
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