采用步进光刻技术在FBK上开发先进的硅三维传感器

M. Boscardin, F. Ficorella, S. Ronchin, S. Ferrari, R. Mendicino, A. Lai, M. Meschini, Md. Arif Abdulla Samy, G. Betta
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引用次数: 0

摘要

我们正在开发基于柱状电极和沟槽电极的新一代3D像素传感器,旨在升级高亮度大型强子对撞机的主要探测器实验。这些3D传感器具有较小的像素尺寸和缩小的几何形状,并且它们的布局比以前的设备密集得多,这对光刻设备来说是一个挑战。掩模对准器不适合在这些条件下使用,因此我们已经开始使用步进光刻,它可以产生更小的最小特征尺寸和更高的对准精度。我们报告了从第一批步进批次获得的初步结果,这证实了具有良好制造成品率的先进3D传感器的可行性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Development of Advanced Silicon 3D Sensors at FBK Using Stepper Lithography
We are developing a new generation of 3D pixel sensors, based on columnar electrodes and trenched electrodes, and aimed at the upgrades of the major detector experiments at the High Luminosity LHC. These 3D sensors have small pixel size with downscaled geometries, and their layout is much denser than in previous devices, that is a challenge for lithography equipment. Mask aligners are not favored to be used in these conditions, so we have started to use stepper lithography, which yields a much smaller minimum feature size and higher alignment accuracy. We report on the initial results obtained from the first stepper batches, which confirm the feasibility of advanced 3D sensors with a good fabrication yield.
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