具有自然纹理表面的氮化镓基LED提取效率的提高

2009 Conference on Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics Pub Date : 2009-10-30 DOI:10.1109/CLEOPR.2009.5292606

Y. Hsieh, S. Kuo, F. Lai

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引用次数: 2

摘要

采用金属有机化学气相沉积(MOCVD)技术制备了具有自然纹理表面的氮化镓基发光二极管(led)。通过控制生长温度，获得了自然织构的p-GaN表面层。生长温度为850℃的自然纹理表面LED的输出功率比商用LED提高了50%。结果表明，自然纹理表面LED可以极大地提高光提取效率，是制造高效低成本氮化镓基LED的候选材料。

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Enhancement in the extraction efficiency of GaN-based LED with naturally textured surface

GaN-based light-emitting diodes (LEDs) with naturally textured surface grown by metal-organic chemical vapor deposition (MOCVD) were fabricated. A naturally textured p-GaN surface layer was achieved by controlling the growth temperature. The output power of the naturally textured surface LED with 850°C growth temperature increased > 50% than the commercial LED. The results show that the naturally textured surface LED could extremely enhance light extraction efficiency and be a candidate for manufacturing high-efficient low-cost GaN-based LEDs.

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来源期刊

2009 Conference on Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics

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