在任意电路中维持高OIP3的并联变容二极管的调谐限制

W. Allen, D. Peroulis
{"title":"在任意电路中维持高OIP3的并联变容二极管的调谐限制","authors":"W. Allen, D. Peroulis","doi":"10.1109/MWSYM.2015.7167133","DOIUrl":null,"url":null,"abstract":"For the first time, an analytical formula is presented for calculating the OIP3 of any arbitrary circuit with a single shunt varactor diode. Additionally, numerical calculation of the limits on varactor tuning range when a specific OIP3 is desired is discussed, and a commercial varactor is found to maintain 44% of its tuning range with a OIP3 > 37 dBm.","PeriodicalId":6493,"journal":{"name":"2015 IEEE MTT-S International Microwave Symposium","volume":"61 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Tuning limits of shunt varactor diodes for maintaining high OIP3 in arbitrary circuits\",\"authors\":\"W. Allen, D. Peroulis\",\"doi\":\"10.1109/MWSYM.2015.7167133\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"For the first time, an analytical formula is presented for calculating the OIP3 of any arbitrary circuit with a single shunt varactor diode. Additionally, numerical calculation of the limits on varactor tuning range when a specific OIP3 is desired is discussed, and a commercial varactor is found to maintain 44% of its tuning range with a OIP3 > 37 dBm.\",\"PeriodicalId\":6493,\"journal\":{\"name\":\"2015 IEEE MTT-S International Microwave Symposium\",\"volume\":\"61 1\",\"pages\":\"1-4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-05-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE MTT-S International Microwave Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2015.7167133\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE MTT-S International Microwave Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2015.7167133","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

本文首次给出了用单个并联变容二极管计算任意电路OIP3的解析公式。此外,本文还讨论了在需要特定OIP3时变容管调谐范围限制的数值计算,发现当OIP3 > 37 dBm时,商用变容管可保持44%的调谐范围。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Tuning limits of shunt varactor diodes for maintaining high OIP3 in arbitrary circuits
For the first time, an analytical formula is presented for calculating the OIP3 of any arbitrary circuit with a single shunt varactor diode. Additionally, numerical calculation of the limits on varactor tuning range when a specific OIP3 is desired is discussed, and a commercial varactor is found to maintain 44% of its tuning range with a OIP3 > 37 dBm.
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