含光敏水发生器的溶胶-凝胶溶液制备PZT薄膜的电学性质

Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics Pub Date : 1994-08-07 DOI:10.1109/ISAF.1994.522399

Y. Nakao, T. Nakamura, A. Kamisawa, H. Takasu, N. Soyama, G. Sasaki, T. Atsuki, T. Yonezawa, K. Ogi

{"title":"含光敏水发生器的溶胶-凝胶溶液制备PZT薄膜的电学性质","authors":"Y. Nakao, T. Nakamura, A. Kamisawa, H. Takasu, N. Soyama, G. Sasaki, T. Atsuki, T. Yonezawa, K. Ogi","doi":"10.1109/ISAF.1994.522399","DOIUrl":null,"url":null,"abstract":"The photo sensitivity of sol-gel solution of PbZr/sub x/Ti/sub 1-x/O/sub 3/ (PZT) was confirmed. A coated film of the sol-gel solution on Si and Ir/IrO/sub 2//SiO/sub 2//Si substrates was exposed to an excimer laser and developed with 2-methoxyethanol diluted with isopropyl alcohol. More than 900 mJ/cm/sup 2/ of exposure was required to obtain the micro patterns. The film was finally annealed at 700/spl deg/C for 60 s by rapid thermal annealing (RTA). From this process, half-micron patterns of PZT films were obtained. The 200-nm-thick film showed P/sub r/ of 16.6 /spl mu/C/cm/sup 2/ and E/sub c/ of 38.8 kV/cm. After 1/spl times/10/sup 12/ cycles of switching pulses, the films showed no degradation of remanent polarization. Studying for 1-transistor-type ferroelectric memory, metal-ferroelectric-metal-insulator-semiconductor (MFMIS) structure was prepared with this process.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"59 1","pages":"450-453"},"PeriodicalIF":0.0000,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Electrical properties of PZT thin films derived from sol-gel solution containing photo-sensitive water-generater\",\"authors\":\"Y. Nakao, T. Nakamura, A. Kamisawa, H. Takasu, N. Soyama, G. Sasaki, T. Atsuki, T. Yonezawa, K. Ogi\",\"doi\":\"10.1109/ISAF.1994.522399\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The photo sensitivity of sol-gel solution of PbZr/sub x/Ti/sub 1-x/O/sub 3/ (PZT) was confirmed. A coated film of the sol-gel solution on Si and Ir/IrO/sub 2//SiO/sub 2//Si substrates was exposed to an excimer laser and developed with 2-methoxyethanol diluted with isopropyl alcohol. More than 900 mJ/cm/sup 2/ of exposure was required to obtain the micro patterns. The film was finally annealed at 700/spl deg/C for 60 s by rapid thermal annealing (RTA). From this process, half-micron patterns of PZT films were obtained. The 200-nm-thick film showed P/sub r/ of 16.6 /spl mu/C/cm/sup 2/ and E/sub c/ of 38.8 kV/cm. After 1/spl times/10/sup 12/ cycles of switching pulses, the films showed no degradation of remanent polarization. Studying for 1-transistor-type ferroelectric memory, metal-ferroelectric-metal-insulator-semiconductor (MFMIS) structure was prepared with this process.\",\"PeriodicalId\":20488,\"journal\":{\"name\":\"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics\",\"volume\":\"59 1\",\"pages\":\"450-453\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISAF.1994.522399\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.1994.522399","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

确定了PbZr/sub x/Ti/sub 1-x/O/sub 3/ (PZT)溶胶-凝胶溶液的光敏性。在准分子激光照射下，用异丙醇稀释的2-甲氧基乙醇在Si和Ir/IrO/sub - 2//SiO/sub - 2//Si衬底上涂覆了溶胶-凝胶溶液薄膜。需要超过900兆焦耳/厘米/sup 2/的曝光才能获得微模式。最后采用快速热退火法(RTA)对薄膜在700/spl℃下退火60 s。在此过程中，得到了半微米的PZT薄膜。200 nm厚薄膜的P/sub r/为16.6 /spl mu/C/cm/sup 2/， E/sub C/为38.8 kV/cm。经过1/spl次/10/sup / 12次开关脉冲循环后，膜的残余极化没有退化。研究了单晶体管型铁电存储器，利用该工艺制备了金属-铁电-金属-绝缘体-半导体(MFMIS)结构。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Electrical properties of PZT thin films derived from sol-gel solution containing photo-sensitive water-generater

The photo sensitivity of sol-gel solution of PbZr/sub x/Ti/sub 1-x/O/sub 3/ (PZT) was confirmed. A coated film of the sol-gel solution on Si and Ir/IrO/sub 2//SiO/sub 2//Si substrates was exposed to an excimer laser and developed with 2-methoxyethanol diluted with isopropyl alcohol. More than 900 mJ/cm/sup 2/ of exposure was required to obtain the micro patterns. The film was finally annealed at 700/spl deg/C for 60 s by rapid thermal annealing (RTA). From this process, half-micron patterns of PZT films were obtained. The 200-nm-thick film showed P/sub r/ of 16.6 /spl mu/C/cm/sup 2/ and E/sub c/ of 38.8 kV/cm. After 1/spl times/10/sup 12/ cycles of switching pulses, the films showed no degradation of remanent polarization. Studying for 1-transistor-type ferroelectric memory, metal-ferroelectric-metal-insulator-semiconductor (MFMIS) structure was prepared with this process.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics

自引率

0.00%

发文量