{"title":"光伏硅-镁锭边缘O - i和C - s杂质的研究","authors":"F. Boufelgha, Y. Chettate, S. Belhousse","doi":"10.13189/UJPA.2016.100202","DOIUrl":null,"url":null,"abstract":"The objective of this work is determining the substitutional carbon ([Cs]) and interstitial oxygen ([Oi]) concentrations in the edge of the multicrystalline silicon ingot (mc-Si) for photovoltaic applications obtained by the heat exchanger method (HEM). Some calculations of [Cs] and [Oi] was obtain by the Fourier Transform InfraRed spectroscopy (FTIR). The results obtained for [Cs] give an increase of bottom-up of the ingot: 130 ppm to 150 ppm. The results obtained for the [Oi] give constant concentrations throughout the edge of the ingot with an author of concentration 325 ppm.","PeriodicalId":23443,"journal":{"name":"Universal Journal of Physics and Application","volume":"23 1","pages":"40-42"},"PeriodicalIF":0.0000,"publicationDate":"2016-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"O i and C s Impurities Study on the Edge of Si-mc Ingot for Photovoltaic Applications\",\"authors\":\"F. Boufelgha, Y. Chettate, S. Belhousse\",\"doi\":\"10.13189/UJPA.2016.100202\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The objective of this work is determining the substitutional carbon ([Cs]) and interstitial oxygen ([Oi]) concentrations in the edge of the multicrystalline silicon ingot (mc-Si) for photovoltaic applications obtained by the heat exchanger method (HEM). Some calculations of [Cs] and [Oi] was obtain by the Fourier Transform InfraRed spectroscopy (FTIR). The results obtained for [Cs] give an increase of bottom-up of the ingot: 130 ppm to 150 ppm. The results obtained for the [Oi] give constant concentrations throughout the edge of the ingot with an author of concentration 325 ppm.\",\"PeriodicalId\":23443,\"journal\":{\"name\":\"Universal Journal of Physics and Application\",\"volume\":\"23 1\",\"pages\":\"40-42\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Universal Journal of Physics and Application\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.13189/UJPA.2016.100202\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Universal Journal of Physics and Application","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.13189/UJPA.2016.100202","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
O i and C s Impurities Study on the Edge of Si-mc Ingot for Photovoltaic Applications
The objective of this work is determining the substitutional carbon ([Cs]) and interstitial oxygen ([Oi]) concentrations in the edge of the multicrystalline silicon ingot (mc-Si) for photovoltaic applications obtained by the heat exchanger method (HEM). Some calculations of [Cs] and [Oi] was obtain by the Fourier Transform InfraRed spectroscopy (FTIR). The results obtained for [Cs] give an increase of bottom-up of the ingot: 130 ppm to 150 ppm. The results obtained for the [Oi] give constant concentrations throughout the edge of the ingot with an author of concentration 325 ppm.
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