{"title":"GaN HEMT射频功率放大器的线性度-电路视角","authors":"H. Sarbishaei, D. Y. Wu, S. Boumaiza","doi":"10.1109/MWSYM.2012.6259553","DOIUrl":null,"url":null,"abstract":"In this paper, the nonlinearity generation mechanisms causing AM/AM and AM/PM in GaN power amplifier are analyzed from a circuit perspective. The nonlinear device transconductance is found to be the primary source of slow compression in GaN PA's AM/AM characteristic, while the nonlinear input capacitance is the primary source of AM/PM distortion. Using two 800 MHz GaN PAs, we show that matching networks optimized for linearity can minimize a PA's nonlinear distortions and memory effects.","PeriodicalId":6385,"journal":{"name":"2012 IEEE/MTT-S International Microwave Symposium Digest","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2012-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"30","resultStr":"{\"title\":\"Linearity of GaN HEMT RF power amplifiers - a circuit perspective\",\"authors\":\"H. Sarbishaei, D. Y. Wu, S. Boumaiza\",\"doi\":\"10.1109/MWSYM.2012.6259553\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, the nonlinearity generation mechanisms causing AM/AM and AM/PM in GaN power amplifier are analyzed from a circuit perspective. The nonlinear device transconductance is found to be the primary source of slow compression in GaN PA's AM/AM characteristic, while the nonlinear input capacitance is the primary source of AM/PM distortion. Using two 800 MHz GaN PAs, we show that matching networks optimized for linearity can minimize a PA's nonlinear distortions and memory effects.\",\"PeriodicalId\":6385,\"journal\":{\"name\":\"2012 IEEE/MTT-S International Microwave Symposium Digest\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-06-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"30\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE/MTT-S International Microwave Symposium Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2012.6259553\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE/MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2012.6259553","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Linearity of GaN HEMT RF power amplifiers - a circuit perspective
In this paper, the nonlinearity generation mechanisms causing AM/AM and AM/PM in GaN power amplifier are analyzed from a circuit perspective. The nonlinear device transconductance is found to be the primary source of slow compression in GaN PA's AM/AM characteristic, while the nonlinear input capacitance is the primary source of AM/PM distortion. Using two 800 MHz GaN PAs, we show that matching networks optimized for linearity can minimize a PA's nonlinear distortions and memory effects.
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