共伽马射线诱导的p沟道mosfet的总剂量效应

S. Nagaraj, Vikram Singh, H. S. Jayanna, K. M. Balakrishna, R. Damle
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引用次数: 2

摘要

固体器件的总剂量效应(Total Dose Effect, TDE)引起了人们的严重关注,因为它会改变器件的电性能,导致器件的退化和相关系统的故障。对商用p沟道金属氧化物半导体场效应晶体管(mosfet)中由于TDE引起的电离进行了研究,发现其失效机制主要是由于氧化物性质的变化和栅极氧化物下沟道的表面效应。当总γ剂量为1 Mrad时,mosfet的阈值电压从- 0.69 V转变为- 2.41 V。辐照器件的净负阈值位移揭示了氧化物捕获电荷对器件退化的主要贡献。通过亚阈值测量估计了辐射诱导的氧化物和界面电荷密度,发现在总γ剂量为1 Mrad后,陷阱密度增加了一个数量级。其他参数如跨导、亚阈值摆幅和漏极饱和电流也作为γ剂量的函数进行了研究。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
60Co-Gamma Ray Induced Total Dose Effects on P-Channel MOSFETs
Total Dose Effect (TDE) on solid state devices is of serious concern as it changes the electrical properties leading to degradation of the devices and failure of the systems associated with them. Ionization caused due to TDE in commercial P-channel Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) has been studied, where the failure mechanism is found to be mainly a result of the changes in the oxide properties and the surface effects at the channel beneath the gate oxide. The threshold voltage of the MOSFETs was found to shift from −0.69 V to −2.41 V for a total gamma dose of 1 Mrad. The net negative threshold shifts in the irradiated devices reveal the major contribution of oxide trapped charges to device degradation. The radiation induced oxide and interface charge densities were estimated through subthreshold measurements, and the trap densities were found to increase by one order in magnitude after a total gamma dose of 1 Mrad. Other parameters like transconductance, subthreshold swing, and drain saturation current are also investigated as a function of gamma dose.
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