电荷注入不稳定性

T. Christen
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引用次数: 5

摘要

我们发现,在无载流子但具有非线性载流子迁移率的介质中,电场增强缺陷处的电荷注入对应于绝缘状态的不稳定性。带电态的形成是由两个不同的过程控制的,它们具有明显分离的时间尺度。首先,由于电荷注入模式的快速增长,在注入缺陷附近形成局部电荷云。其次,电荷在体积中慢慢重新分配。本文讨论了圆柱和球面几何的绝缘状态的线性不稳定性。该理论解释了实验观察到的临界电场随着注入接触尺寸的减小而增加。给出了直流和交流偏置绝缘子的数值结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Charge injection instability
We show that charge injection at a field-enhancing defect in a dielectric free of carriers but with a nonlinear carrier mobility corresponds to an instability of the insulating state. The formation of the charged state is governed by two different processes with clearly separated time scales. First, due to a fast growth of a charge-injection mode, a localized charge cloud forms near the injecting defect. Secondly, the charge slowly redistributes in the bulk. In the present paper we discuss the linear instability of the insulating state for cylindrical and spherical geometries. The theory explains an experimentally observed increase of the critical electric field with decreasing size of the injecting contact. Numerical results are presented for dc and ac biased insulators.
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