SiC MOSFET和SiC肖特基二极管对的分段解析瞬态模型

IF 1 4区工程技术 Q4 COMPUTER SCIENCE, INTERDISCIPLINARY APPLICATIONS

Compel-The International Journal for Computation and Mathematics in Electrical and Electronic Engineering Pub Date : 2023-06-25 DOI:10.1109/COMPEL52896.2023.10221131

Yikang Xiao, Zhengming Zhao, Bochen Shi, Zhujun Yu, Shengyu Jia, Shiqi Ji

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引用次数: 0

摘要

本文提出了SiC MOSFET和SiC肖特基二极管对的分段解析暂态(PAT)模型，该模型可以模拟具有大量功率开关的复杂电力电子系统中的开关暂态。该模型消除了由寄生参数引起的刚度，仿真速度快。考虑了结电容的非线性。为验证模型的准确性，进行了双脉冲试验。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Piecewise Analytical Transient Model of SiC MOSFET and SiC Schottky Diode Pair

This paper proposed a piecewise analytical transient (PAT) model of SiC MOSFET and SiC Schottky diode pair that can simulate the switching transient in a complex power electronics system with a large number of power switches. The proposed model eliminates the stiffness caused by the parasitic parameters and has a fast simulation speed. The nonlinearity of the junction capacitances is considered. Double pulse tests are conducted to verify the accuracy of the model.

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来源期刊

Compel-The International Journal for Computation and Mathematics in Electrical and Electronic Engineering 工程技术-工程：电子与电气

CiteScore

1.60

自引率

0.00%

发文量

124

审稿时长

4.2 months

期刊介绍： COMPEL exists for the discussion and dissemination of computational and analytical methods in electrical and electronic engineering. The main emphasis of papers should be on methods and new techniques, or the application of existing techniques in a novel way. Whilst papers with immediate application to particular engineering problems are welcome, so too are papers that form a basis for further development in the area of study. A double-blind review process ensures the content''s validity and relevance.