A. Rathore, Satish Kumar, Dhirendra Kumar, V. Sathe
{"title":"VO2薄膜中一阶金属绝缘子跃迁的生长与研究","authors":"A. Rathore, Satish Kumar, Dhirendra Kumar, V. Sathe","doi":"10.1063/1.4917942","DOIUrl":null,"url":null,"abstract":"VO2 films have been grown on Si substrate using pulse laser deposition technique. The as-deposited film prepared by V2O3 target is found to possess signatures of V2O5 phase. Up on annealing at 780°C the film transforms to VO2 phase. The annealed film is found to be highly oriented along (011) and single phase in nature. The high temperature Raman spectroscopic measurements on the annealed film showed first order transition from monoclinic insulating phase to conductive tetragonal rutile phase around 65°C.","PeriodicalId":16850,"journal":{"name":"Journal of Physics C: Solid State Physics","volume":"144 1","pages":"080038"},"PeriodicalIF":0.0000,"publicationDate":"2015-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Growth and study of first order metal insulator transition in VO2 films\",\"authors\":\"A. Rathore, Satish Kumar, Dhirendra Kumar, V. Sathe\",\"doi\":\"10.1063/1.4917942\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"VO2 films have been grown on Si substrate using pulse laser deposition technique. The as-deposited film prepared by V2O3 target is found to possess signatures of V2O5 phase. Up on annealing at 780°C the film transforms to VO2 phase. The annealed film is found to be highly oriented along (011) and single phase in nature. The high temperature Raman spectroscopic measurements on the annealed film showed first order transition from monoclinic insulating phase to conductive tetragonal rutile phase around 65°C.\",\"PeriodicalId\":16850,\"journal\":{\"name\":\"Journal of Physics C: Solid State Physics\",\"volume\":\"144 1\",\"pages\":\"080038\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-06-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Physics C: Solid State Physics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1063/1.4917942\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Physics C: Solid State Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1063/1.4917942","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Growth and study of first order metal insulator transition in VO2 films
VO2 films have been grown on Si substrate using pulse laser deposition technique. The as-deposited film prepared by V2O3 target is found to possess signatures of V2O5 phase. Up on annealing at 780°C the film transforms to VO2 phase. The annealed film is found to be highly oriented along (011) and single phase in nature. The high temperature Raman spectroscopic measurements on the annealed film showed first order transition from monoclinic insulating phase to conductive tetragonal rutile phase around 65°C.
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